公开(公告)号：US09070610B2

公开(公告)日：2015-06-30

申请号：US13162060

申请日：2011-06-16

申请人： Keiji Sasano ,  Hiroaki Tanaka ,  Hiroki Hagiwara ,  Yuki Tsuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Hirokazu Yoshida ,  Noboru Kawabata ,  Hironori Yokoyama

发明人： Keiji Sasano ,  Hiroaki Tanaka ,  Hiroki Hagiwara ,  Yuki Tsuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Hirokazu Yoshida ,  Noboru Kawabata ,  Hironori Yokoyama

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14618 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/16195 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

摘要翻译： 固态成像装置包括电连接的图像传感器芯片和信号处理芯片。 低导热率区域位于图像传感器芯片和信号处理芯片之间。 低热导率区域被配置为使图像传感器芯片与由信号处理芯片产生的热量隔离。

公开(公告)号：US20120008025A1

公开(公告)日：2012-01-12

申请号：US13162060

申请日：2011-06-16

申请人： Keiji Sasano ,  Hiroaki Tanaka ,  Hiroki Hagiwara ,  Yuki Tsuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Hirokazu Yoshida ,  Noboru Kawabata ,  Hironori Yokoyama

发明人： Keiji Sasano ,  Hiroaki Tanaka ,  Hiroki Hagiwara ,  Yuki Tsuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Hirokazu Yoshida ,  Noboru Kawabata ,  Hironori Yokoyama

IPC分类号： H04N5/335

CPC分类号： H01L27/14618 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/16195 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

摘要翻译： 固态成像装置包括电连接的图像传感器芯片和信号处理芯片。 低导热率区域位于图像传感器芯片和信号处理芯片之间。 低热导率区域被配置为使图像传感器芯片与由信号处理芯片产生的热量隔离。

公开(公告)号：US20130010145A1

公开(公告)日：2013-01-10

申请号：US13530746

申请日：2012-06-22

申请人： Hiroki Hagiwara ,  Keiji Sasano ,  Hiroaki Tanaka ,  Yuki Tuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Noboru Kawabata ,  Hirokazu Yoshida ,  Hironori Yokoyama

发明人： Hiroki Hagiwara ,  Keiji Sasano ,  Hiroaki Tanaka ,  Yuki Tuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Noboru Kawabata ,  Hirokazu Yoshida ,  Hironori Yokoyama

IPC分类号： H04N5/225

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H04N5/2253 ,  H04N5/369 ,  H05K1/0206 ,  H05K1/0207 ,  H05K2201/10121 ,  H01L2924/00014 ,  H01L2924/00

摘要： A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

公开(公告)号：US08711280B2

公开(公告)日：2014-04-29

申请号：US13530746

申请日：2012-06-22

申请人： Hiroki Hagiwara ,  Keiji Sasano ,  Hiroaki Tanaka ,  Yuki Tuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Noboru Kawabata ,  Hirokazu Yoshida ,  Hironori Yokoyama

发明人： Hiroki Hagiwara ,  Keiji Sasano ,  Hiroaki Tanaka ,  Yuki Tuji ,  Tsuyoshi Watanabe ,  Koji Tsuchiya ,  Kenzo Tanaka ,  Takaya Wada ,  Noboru Kawabata ,  Hirokazu Yoshida ,  Hironori Yokoyama

IPC分类号： H04N5/225 ,  H01L21/00

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H04N5/2253 ,  H04N5/369 ,  H05K1/0206 ,  H05K1/0207 ,  H05K2201/10121 ,  H01L2924/00014 ,  H01L2924/00

摘要： A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

摘要翻译： 固体摄像装置包括固体摄像装置，信号处理电路装置以及多层布线包装体。 固态图像感测装置在其图像感测区域中具有像素。 像素接收入射光并产生信号电荷。 信号处理电路装置被配置为面对图像感测区域，并且对从固态图像感测装置输出的信号进行信号处理。 多层布线封装具有布线层，固态图像感测装置和信号处理电路装置。 每个布线层通过绝缘体层叠。 多层布线封装被形成为使得设置在固态图像感测装置和信号处理电路装置之间的第一布线层具有比第二布线层更大的厚度，并且导热率高于或等于 第二布线层。

公开(公告)号：US20070164819A1

公开(公告)日：2007-07-19

申请号：US10593720

申请日：2005-03-24

申请人： Junetsu Urata ,  Naoki Onishi ,  Masaki Suto ,  Hironori Yokoyama

发明人： Junetsu Urata ,  Naoki Onishi ,  Masaki Suto ,  Hironori Yokoyama

IPC分类号： H03F3/68

CPC分类号： H03F1/0288 ,  H03F1/30 ,  H03F2200/447 ,  H03F2200/543 ,  H05K1/0243 ,  H05K2201/0187

摘要： With an amplifier configured by including Doherty-type amplifier sections 21 to 25, the area of the circuits is reduced so that the size reduction is achieved. Moreover, the properties of the Doherty-type amplifier sections (Doherty properties) are stabilized against any environmental change of humidity and temperature. As an example, the permittivity of a substrate 3 configuring one or more of quarter wavelength lines 23 and/or 24 included in the Doherty-type amplifier sections 21 to 25 is increased compared with the permittivity of a substrate 2 in a close range. As another example, a line portion forming an output circuit of a carrier amplifier in the Doherty-type amplifier sections is configured by using a substrate material being physically stable against either or both of any change observed in the humidity and the temperature.

摘要翻译： 通过包括Doherty型放大器部分21至25构成的放大器，电路的面积减小，从而实现了尺寸减小。 此外，Doherty型放大器部分（Doherty性能）的性能可以抵抗任何湿度和温度的环境变化。 作为示例，构成包括在Doherty型放大器部21至25中的四分之一波长线23和/或24中的一个或多个的基板3的介电常数相对于近距离的基板2的介电常数增加。 作为另一个例子，在Doherty型放大器部分中形成载流子放大器的输出电路的线路部分通过使用在湿度和温度中观察到的任何变化中的任一个或两个而物理上稳定的衬底材料来构成。