公开(公告)号：US20070292984A1

公开(公告)日：2007-12-20

申请号：US11891535

申请日：2007-08-10

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/18

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US08652864B2

公开(公告)日：2014-02-18

申请号：US12903945

申请日：2010-10-13

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US07420234B2

公开(公告)日：2008-09-02

申请号：US11318176

申请日：2005-12-23

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/0232

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US07217961B2

公开(公告)日：2007-05-15

申请号：US11340180

申请日：2006-01-26

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20070069238A1

公开(公告)日：2007-03-29

申请号：US11604490

申请日：2006-11-27

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US07351598B2

公开(公告)日：2008-04-01

申请号：US11604490

申请日：2006-11-27

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20060169978A1

公开(公告)日：2006-08-03

申请号：US11340180

申请日：2006-01-26

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0376

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US07943962B2

公开(公告)日：2011-05-17

申请号：US12629755

申请日：2009-12-02

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US08741681B2

公开(公告)日：2014-06-03

申请号：US12903922

申请日：2010-10-13

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US07898000B2

公开(公告)日：2011-03-01

申请号：US12080008

申请日：2008-03-31

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.