公开(公告)号：US08652864B2

公开(公告)日：2014-02-18

申请号：US12903945

申请日：2010-10-13

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US07420234B2

公开(公告)日：2008-09-02

申请号：US11318176

申请日：2005-12-23

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/0232

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US07217961B2

公开(公告)日：2007-05-15

申请号：US11340180

申请日：2006-01-26

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20070069238A1

公开(公告)日：2007-03-29

申请号：US11604490

申请日：2006-11-27

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US20050023922A1

公开(公告)日：2005-02-03

申请号：US10833095

申请日：2004-04-28

申请人： Takashi Araki ,  Masakatsu Matsubara ,  Motoyasu Mochizuki ,  Yukihiko Kazao ,  Masanori Arata ,  Yasuo Hirano ,  Nobutake Aikura ,  Akito Kondou ,  Masahiko Yamashiki ,  Masanori Ohashi ,  Takashi Hanai

发明人： Takashi Araki ,  Masakatsu Matsubara ,  Motoyasu Mochizuki ,  Yukihiko Kazao ,  Masanori Arata ,  Yasuo Hirano ,  Nobutake Aikura ,  Akito Kondou ,  Masahiko Yamashiki ,  Masanori Ohashi ,  Takashi Hanai

IPC分类号： H02K19/10 ,  H02K1/27 ,  H02K21/14 ,  H02K17/42 ,  H02K19/20

CPC分类号： H02K1/2766 ,  H02K2201/06 ,  Y10T29/49012

摘要： A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference thereof, the rotor core being divided into a plurality of blocks, the core materials constituting at least one block having the magnetic concave and convex portions shifted by a predetermined angle relative to the core materials constituting the other or another block on the basis of a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

摘要翻译： 用于磁阻式旋转电机的转子包括通过堆叠多个环形芯材而形成的转子芯，每个环形芯材料包括在其外周交替形成的磁性凹凸部分和中心通孔，转子芯具有轴向 在其外圆周上延伸，转子芯被分成多个块，所述芯材构成至少一个块，其具有相对于构成另一块或另一块的芯材移动预定角度的磁性凹凸部 通过钥匙的中心线的基础，以及插入通过转子芯的中心孔的旋转轴，该轴具有与转子芯的键接合的键槽。

公开(公告)号：US20110033968A1

公开(公告)日：2011-02-10

申请号：US12903945

申请日：2010-10-13

申请人： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

发明人： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

IPC分类号： H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20070292984A1

公开(公告)日：2007-12-20

申请号：US11891535

申请日：2007-08-10

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/18

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US20050104468A1

公开(公告)日：2005-05-19

申请号：US10897009

申请日：2004-07-23

申请人： Takashi Araki ,  Masakatsu Matsubara ,  Motoyasu Mochizuki ,  Yukihiko Kazao ,  Masanori Arata ,  Yasuo Hirano ,  Nobutake Aikura ,  Akito Kondou ,  Masahiko Yamashiki ,  Masanori Ohashi ,  Takashi Hanai ,  Ken Takeda ,  Hiroshi Morohashi

发明人： Takashi Araki ,  Masakatsu Matsubara ,  Motoyasu Mochizuki ,  Yukihiko Kazao ,  Masanori Arata ,  Yasuo Hirano ,  Nobutake Aikura ,  Akito Kondou ,  Masahiko Yamashiki ,  Masanori Ohashi ,  Takashi Hanai ,  Ken Takeda ,  Hiroshi Morohashi

IPC分类号： H02K19/10 ,  H02K1/27 ,  H02K21/12

CPC分类号： H02K1/2766

摘要： A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

摘要翻译： 用于磁阻式旋转电机的转子包括通过堆叠多个环形芯材而形成的转子芯，每个环形芯材料包括在其外周交替形成的磁性凹凸部分和中心通孔，转子芯具有轴向 在外圆周上延伸，所述转子铁芯被分成多个块，所述铁芯材料构成至少三个块中的一个，所述至少三个块中的所述磁性凹凸部在所述转子的旋转方向之一上偏移了预定角度， 方向与转子相对于通过键的中心线的旋转方向相反的方向，构成位于具有磁性凹凸部的一个块的两端的块中的每一个的芯材料偏移预定角度 转子的旋转方向和与转子相对于中心线p的旋转方向相反的方向 并且该转轴通过转子芯的中心孔插入，该轴具有与转子芯的键接合的键槽。

公开(公告)号：US5734195A

公开(公告)日：1998-03-31

申请号：US636887

申请日：1996-04-24

申请人： Ritsuo Takizawa ,  Takahisa Kusaka ,  Takayoshi Higuchi ,  Hideo Kanbe ,  Masanori Ohashi

发明人： Ritsuo Takizawa ,  Takahisa Kusaka ,  Takayoshi Higuchi ,  Hideo Kanbe ,  Masanori Ohashi

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/322 ,  H01L27/148 ,  H01L29/167 ,  H01L29/36 ,  H01L29/04 ,  H01L21/306

CPC分类号： H01L21/26506 ,  H01L21/3221 ,  H01L21/3225 ,  H01L29/167 ,  H01L29/36 ,  Y10S257/913

摘要： In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

摘要翻译： 在根据本发明的半导体晶片中，在半导体衬底的表面上形成外延层，存在与构成半导体衬底的第一元件不同但同源的第二元素，以在半导体衬底上具有峰值浓度 衬底侧而不是表面，并且该峰浓度为1×1016原子/ cm3以上。

公开(公告)号：US5476808A

公开(公告)日：1995-12-19

申请号：US065681

申请日：1993-05-11

申请人： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

发明人： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

IPC分类号： H01L27/148 ,  H01L31/0288 ,  H01L31/103 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/367 ,  H04N5/369 ,  H04N5/372 ,  H01L21/339

CPC分类号： H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

摘要： In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

摘要翻译： 在CCD固体摄像装置中，其中感光部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成，N 型杂质扩散区通过离子注入单一砷（As）形成。 根据该CCD固体摄像装置，可以减少图像感测画面上的亮度缺陷，这是图像感测画面遇到的缺陷之一。 此外，构造PN结的n型杂质扩散区域的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。 此外，还提供了一种制造CCD固态图像感测装置的方法。