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公开(公告)号：US07883911B2
公开(公告)日：2011-02-08
申请号：US12402223
申请日：2009-03-11
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L21/00
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。
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公开(公告)号：US07728366B2
公开(公告)日：2010-06-01
申请号：US10599609
申请日：2005-04-05
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L31/113
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。
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公开(公告)号：US20090176327A1
公开(公告)日：2009-07-09
申请号：US12402223
申请日：2009-03-11
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L21/28
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。
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公开(公告)号：US20070194357A1
公开(公告)日：2007-08-23
申请号：US10599609
申请日：2005-04-05
申请人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
发明人： Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
IPC分类号： H01L31/113
CPC分类号： H01L31/022408 , H01L31/108
摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。
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公开(公告)号：US20090224753A1
公开(公告)日：2009-09-10
申请号：US11993878
申请日：2006-06-29
申请人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
发明人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
IPC分类号： G01N21/41
CPC分类号： G01R15/247
摘要： An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
摘要翻译： 通过气溶胶沉积法在光纤末端的抛光表面上直接形成法布里 - 珀罗共振器结构的电光膜，获得电场传感器。
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公开(公告)号：US08519323B2
公开(公告)日：2013-08-27
申请号：US13412046
申请日：2012-03-05
申请人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
发明人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
CPC分类号： G01R15/247
摘要： A magnetic field sensor fabrication method of directly forming, with an aerosol deposition method, at a tip of an optical fiber, a magnetooptical layer having a refractive index that changes depending on a magnetic field, the method includes establishing a relationship of dc≦d≦dr among a diameter d of the magnetooptical layer, a diameter dc of a core of the optical fiber, and a diameter dr of a clad thereof.
摘要翻译： 一种磁场传感器制造方法，其通过气溶胶沉积法直接在光纤末端形成具有根据磁场而变化的折射率的磁光层，该方法包括建立dc @ d @ dr在磁光层的直径d，光纤的芯的直径dc和其包层的直径dr之间。
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公开(公告)号：US08153955B2
公开(公告)日：2012-04-10
申请号：US11993878
申请日：2006-06-29
申请人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
发明人： Masafumi Nakada , Mizuki Iwanami , Keishi Oohashi , Norio Masuda
CPC分类号： G01R15/247
摘要： An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
摘要翻译： 通过气溶胶沉积法在光纤末端的抛光表面上直接形成法布里 - 珀罗共振器结构的电光膜，获得电场传感器。
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