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    Waveguide type optical device
    1.
    发明授权
    Waveguide type optical device 有权
    波导型光学器件

    公开(公告)号：US08358891B2

    公开(公告)日：2013-01-22

    申请号：US12747953

    申请日：2008-11-20

    申请人： Takanori Shimizu ,  Masafumi Nakada

    发明人： Takanori Shimizu ,  Masafumi Nakada

    IPC分类号： G02B6/26 ,  G02B6/10

    CPC分类号： G02F1/035 ,  G02F2001/212 ,  G02F2201/066 ,  G02F2201/126 ,  G02F2203/15

    摘要： There is provided a waveguide type optical device whose parasitic capacitance is reduced to allow an increase in signal transmission speed. Bottom electrode 41 is formed on substrate 2, bottom cladding 51 is formed on bottom electrode 41, and bottom core 62 is formed on bottom cladding 51. Top core 61 is formed on bottom core 62, top cladding 53 is formed on top core 61, and top electrode 42 is formed on top cladding 53. Two sides of top core 61 and bottom core 62 are covered with side cladding layer 52. Vertically overlapping portions of top electrode 42 and bottom electrode 41 are located almost at a same place as a region for a core layer composed of top core 61 and bottom core 62. The width of one from among top core 61 and bottom core 62 is satisfying a single mode condition, and the width of the other is almost equal to or more than the width of a field distribution.

    摘要翻译： 提供了一种其寄生电容减小以允许信号传输速度增加的波导型光学器件。 底部电极41形成在基板2上，底部包层51形成在底部电极41上，底部芯62形成在底部包层51上。顶部芯61形成在底部芯62上，顶部包层53形成在顶部芯61上， 并且顶部电极42形成在顶部包层53上。顶部芯61和底部芯62的两侧被侧包层52覆盖。顶部电极42和底部电极41的垂直重叠的部分几乎位于与区域 用于由顶芯61和底芯62组成的芯层。顶芯61和底芯62之一的宽度满足单模状态，另一个的宽度几乎等于或大于 一个现场分配。

    Optical phase modulation element and optical modulator using the same
    2.
    发明授权
    Optical phase modulation element and optical modulator using the same 有权
    光相位调制元件和使用其的光调制器

    公开(公告)号：US08116600B2

    公开(公告)日：2012-02-14

    申请号：US12526107

    申请日：2007-12-25

    申请人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    发明人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    IPC分类号： G02F1/01 ,  G02F1/035

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02F1/015 ,  G02F1/025 ,  G02F2202/20 ,  G02F2203/10 ,  G02F2203/50

    摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

    摘要翻译： 提供了一种小尺寸光相位调制元件和使用它的光调制器。 光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯 在使用的波长。 等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。 至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。 等离子体波导具有在施加电压时对入射光进行相位调制的功能。

    Magneto-resistive element and magnetic head for data writing/reading
    9.
    发明授权
    Magneto-resistive element and magnetic head for data writing/reading 有权
    用于数据写入/读取的磁阻元件和磁头

    公开(公告)号：US06490139B1

    公开(公告)日：2002-12-03

    申请号：US09492229

    申请日：2000-01-27

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967

    摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

    摘要翻译： 磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。

    Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system
    10.
    发明授权
    Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system 有权
    磁阻效应器件及其形成方法以及磁阻效应传感器和磁记录系统

    公开(公告)号：US06301088B1

    公开(公告)日：2001-10-09

    申请号：US09289190

    申请日：1999-04-09

    申请人： Masafumi Nakada

    发明人： Masafumi Nakada

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268

    摘要： The present invention provides a multilayer structure comprising: one of a first antiferromagnetic layer and a bias ferromagnetic layer; an interface control layer in contact with the one of the first antiferromagnetic layer and the bias ferromagnetic layer; a free magnetic layer in contact with the interface control layer; a non-magnetic layer in contact with the free magnetic layer; a pinned magnetic layer in contact with the non-magnetic layer; and a second ferromagnetic layer in contact with the pinned magnetic layer.

    摘要翻译： 本发明提供一种多层结构，包括：第一反铁磁层和偏置铁磁层之一; 与所述第一反铁磁层和所述偏置铁磁层中的一个接触的界面控制层; 与界面控制层接触的自由磁性层; 与自由磁性层接触的非磁性层; 与非磁性层接触的钉扎磁性层; 以及与被钉扎的磁性层接触的第二铁磁层。