PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置,使用其的成像装置及其制造方法

    公开(公告)号:US20130161627A1

    公开(公告)日:2013-06-27

    申请号:US13707537

    申请日:2012-12-06

    IPC分类号: H01L27/146 H01L29/66

    摘要: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

    摘要翻译: 一种光电转换装置包括:有源矩阵型TFT阵列基板,光电转换元件和薄膜晶体管以矩阵形状布置在其上,其中光电转换元件通过经由第一层间绝缘开口的接触孔与漏电极连接 提供在薄膜晶体管上方的薄膜,其中数据线和偏置线通过经由第二层间绝缘开口的相应接触孔与源电极和光电转换元件连接,并且其中至少一部分光电转换元件 固定为具有与栅极线的延伸方向相邻的像素之间的正常像素不同的形状,并且在具有不同的像素的像素的晶体管中切断光电转换元件与数据线之间的电连接 形状。