摘要:
A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.
摘要:
A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.
摘要:
A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.
摘要:
An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.
摘要:
There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.
摘要:
A photosensor includes a photodiode including a semiconductor layer. The semiconductor layer is made up of an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer, for example. The photosensor further includes a transparent electrode made of a transparent conductive film, and a nitrogen-containing semiconductor layer formed between the semiconductor layer and the transparent electrode.
摘要:
A method of manufacturing a transflective type liquid crystal display device includes forming an organic film having different film thicknesses on a passivation film covering a TFT, etching the passivation film to form a contact hole, etching a reflective electrode and a transmissive electrode formed on the organic film by using a resist pattern having different film thicknesses, removing, by ashing, a thin film portion of the resist pattern, and a thin film portion of the organic film exposed from the transmissive electrode to form an opening, etching the reflective electrode by using the resist pattern left after the removal of the thin film portion, and bonding substrates in such a manner that a sealing material in a shape of a frame is arranged in the opening of the organic film.
摘要:
A method of manufacturing a transflective type liquid crystal display device includes forming an organic film having different film thicknesses on a passivation film covering a TFT, etching the passivation film to form a contact hole, etching a reflective electrode and a transmissive electrode formed on the organic film by using a resist pattern having different film thicknesses, removing, by ashing, a thin film portion of the resist pattern, and a thin film portion of the organic film exposed from the transmissive electrode to form an opening, etching the reflective electrode by using the resist pattern left after the removal of the thin film portion, and bonding substrates in such a manner that a sealing material in a shape of a frame is arranged in the opening of the organic film.
摘要:
A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric conversion layer formed on the lower electrode, an upper electrode formed from a transparent conductive film on the photoelectric conversion layer, the upper electrode being formed so as to be contained within an upper surface of the photoelectric conversion layer as viewed from a top, and a protective film (compound layer or the like) formed so as to protect a part of an upper surface of the photoelectric conversion layer located outside the upper electrode.
摘要:
A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.