PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置,使用其的成像装置及其制造方法

    公开(公告)号:US20130161627A1

    公开(公告)日:2013-06-27

    申请号:US13707537

    申请日:2012-12-06

    IPC分类号: H01L27/146 H01L29/66

    摘要: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

    摘要翻译: 一种光电转换装置包括:有源矩阵型TFT阵列基板,光电转换元件和薄膜晶体管以矩阵形状布置在其上,其中光电转换元件通过经由第一层间绝缘开口的接触孔与漏电极连接 提供在薄膜晶体管上方的薄膜,其中数据线和偏置线通过经由第二层间绝缘开口的相应接触孔与源电极和光电转换元件连接,并且其中至少一部分光电转换元件 固定为具有与栅极线的延伸方向相邻的像素之间的正常像素不同的形状,并且在具有不同的像素的像素的晶体管中切断光电转换元件与数据线之间的电连接 形状。

    LIQUID CRYSTAL DISPLAY DEVICE
    2.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20120200799A1

    公开(公告)日:2012-08-09

    申请号:US13450849

    申请日:2012-04-19

    IPC分类号: G02F1/1339

    CPC分类号: G02F1/13394 G02F1/133555

    摘要: A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.

    摘要翻译: 液晶显示装置具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板,相对基板,粘合两基板的密封材料,形成在TFT阵列基板上的有机膜,并且具有设置在像素电极下方的厚膜部分和设置在像素电极下方的薄膜部分 厚膜部分,形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件,以及形成在显示区域外部和密封材料内部的区域中的间隙保持焊盘,以根据 到像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上方和像素电极之间保持两个基板之间的基板间隙。

    IMAGE DETECTOR
    4.
    发明申请
    IMAGE DETECTOR 有权
    图像检测器

    公开(公告)号:US20130140568A1

    公开(公告)日:2013-06-06

    申请号:US13691383

    申请日:2012-11-30

    IPC分类号: H01L31/0248

    摘要: An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.

    摘要翻译: 图像检测器包括:具有像素区域的有源矩阵型TFT阵列基板,其中光电转换元件和薄膜晶体管以矩阵形状排列,数据线和偏置线; 转换层,其设置在TFT阵列基板上并将辐射转换成光; 以及覆盖所述转换层的导电盖,其中所述导电盖粘附在上层中的粘合区域中,所述粘合区域中的至少一个数据线和偏置线从像素区域延伸到每个区域 端子,并且其中通过至少两层构成的无机绝缘膜形成在数据线和偏置线中的至少一个和粘附区域之间。

    LIQUID CRYSTAL DISPLAY DEVICE
    5.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20090273749A1

    公开(公告)日:2009-11-05

    申请号:US12432320

    申请日:2009-04-29

    IPC分类号: G02F1/1339 G02F1/1335

    CPC分类号: G02F1/13394 G02F1/133555

    摘要: There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.

    摘要翻译: 提供一种液晶显示装置,其具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板,相对基板,粘合两基板的密封材料,形成在TFT阵列基板上并具有设置在像素电极下方的厚膜部分的有机膜,以及薄膜部分 在厚膜部分外部,形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件,以及形成在显示区域外部和密封材料内部的区域中的间隙保持垫,以将显示区域外部的基板间隙调整 根据像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上并在像素电极之上保持两个基板之间的衬底间隙。

    STORAGE DEVICE
    6.
    发明申请
    STORAGE DEVICE 有权
    储存设备

    公开(公告)号:US20110149500A1

    公开(公告)日:2011-06-23

    申请号:US13037721

    申请日:2011-03-01

    IPC分类号: H05K7/20

    摘要: In a storage device accommodating a plurality of memory devices in a general-purpose chassis provided from both surface sides thereof, a cooling device is provided on the front of the memory devices. This cooling device is allowed to freely move to leave available the area in front of the memory devices, thereby enabling maintenance and replacement of the memory devices from the both surface sides of the chassis. With such a storage device of a type using a general-purpose chassis, and inserting therein a plurality of memory devices from the both surface sides thereof, even if a cooling device is located on the front of the chassis, the memory devices can be subjected to maintenance and replacement.

    摘要翻译: 在容纳从其表面侧设置的通用底盘中的多个存储装置的存储装置中,在存储装置的前方设置有冷却装置。 允许该冷却装置自由移动以使存储装置前面的区域可用,从而能够从底盘的两个表面侧维护和更换存储装置。 使用这种使用通用底盘的类型的存储装置,并且从其两个表面侧插入多个存储装置,即使冷却装置位于机架的前部,存储装置也可以受到 进行维护和更换。

    Switch device, storage control system and trace data obtaining method
    7.
    发明申请
    Switch device, storage control system and trace data obtaining method 有权
    开关装置,存储控制系统和跟踪数据获取方法

    公开(公告)号:US20080059844A1

    公开(公告)日:2008-03-06

    申请号:US11976530

    申请日:2007-10-25

    申请人: Kenichi MIYAMOTO

    发明人: Kenichi MIYAMOTO

    IPC分类号: G06F11/14

    摘要: A fiber channel switch (hereinafter, FC-SW) connected to a plurality of communications devices is provided with a buffer for temporarily storing data received from servers via a first communications port, a trace data storage memory for storing trace data, and a microprocessor (MP) for sending data accumulated in the buffer to a storage control system. The MP stores the information about the data about the received data into the trace data storage memory as trace data, issues a write command to the storage control system if it is detected that trace data sending condition is satisfied, and reads out the trace data stored in the trace data storage memory and sends it to the storage control system.

    摘要翻译: 连接到多个通信设备的光纤通道交换机(以下称为FC-SW)具有用于临时存储经由第一通信端口从服务器接收的数据的缓冲器,用于存储跟踪数据的跟踪数据存储存储器和微处理器( MP),用于将存储在缓冲器中的数据发送到存储控制系统。 MP将关于接收到的数据的信息作为跟踪数据存储到跟踪数据存储存储器中,如果检测到满足跟踪数据发送条件,则向存储控制系统发出写入命令,并读出存储的跟踪数据 在跟踪数据存储存储器中,并将其发送到存储控制系统。

    STORAGE DEVICE
    8.
    发明申请
    STORAGE DEVICE 有权
    储存设备

    公开(公告)号:US20100053879A1

    公开(公告)日:2010-03-04

    申请号:US12273694

    申请日:2008-11-19

    IPC分类号: G06F1/16

    摘要: In a storage device accommodating a plurality of memory devices in a general-purpose chassis provided from both surface sides thereof, a cooling device is provided on the front of the memory devices. This cooling device is allowed to freely move to leave available the area in front of the memory devices, thereby enabling maintenance and replacement of the memory devices from the both surface sides of the chassis. With such a storage device of a type using a general-purpose chassis, and inserting therein a plurality of memory devices from the both surface sides thereof, even if a cooling device is located on the front of the chassis, the memory devices can be subjected to maintenance and replacement.

    摘要翻译: 在容纳从其表面侧设置的通用底盘中的多个存储装置的存储装置中,在存储装置的前方设置有冷却装置。 允许该冷却装置自由移动以使存储装置前面的区域可用,从而能够从底盘的两个表面侧维护和更换存储装置。 使用这种使用通用底盘的类型的存储装置,并且从其两个表面侧插入多个存储装置,即使冷却装置位于机架的前部,存储装置也可以受到 进行维护和更换。

    AMPLIFYING CIRCUIT
    9.
    发明申请
    AMPLIFYING CIRCUIT 有权
    放大电路

    公开(公告)号:US20090140811A1

    公开(公告)日:2009-06-04

    申请号:US12274015

    申请日:2008-11-19

    IPC分类号: H03F3/26

    摘要: First and second voltage buffers are added to an amplifying circuit including input and output amplifying stages in which a P-MOS transistor and an N-MOS transistor operate as a push-pull circuit. An input of the first voltage buffer is connected to an output of the amplifying circuit, and an output of the first voltage buffer is connected via a first phase compensating capacitor to a gate electrode of the P-MOS transistor, and is connected via a second phase compensating capacitor to a gate electrode of the N-MOS transistor. An input of the second voltage buffer is connected to the output of the amplifying circuit, and an output of the second voltage buffer is connected via a third phase compensating capacitor to the gate electrode of the P-MOS transistor, and is connected via a fourth phase compensating capacitor to the gate electrode of the N-MOS transistor.

    摘要翻译: 将第一和第二电压缓冲器加到包括P-MOS晶体管和N-MOS晶体管作为推挽电路工作的输入和输出放大级的放大电路中。 第一电压缓冲器的输入端连接到放大电路的输出,第一电压缓冲器的输出经由第一相位补偿电容器连接到P-MOS晶体管的栅电极,并经由第二电压缓冲器 相位补偿电容器到N-MOS晶体管的栅电极。 第二电压缓冲器的输入端连接到放大电路的输出端,第二电压缓冲器的输出经由第三相位补偿电容器连接到P-MOS晶体管的栅电极,并通过第四电压缓冲器 N相MOS晶体管的栅电极相位补偿电容。