摘要:
A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.
摘要:
A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.
摘要:
A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.
摘要:
An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.
摘要:
There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.
摘要:
In a storage device accommodating a plurality of memory devices in a general-purpose chassis provided from both surface sides thereof, a cooling device is provided on the front of the memory devices. This cooling device is allowed to freely move to leave available the area in front of the memory devices, thereby enabling maintenance and replacement of the memory devices from the both surface sides of the chassis. With such a storage device of a type using a general-purpose chassis, and inserting therein a plurality of memory devices from the both surface sides thereof, even if a cooling device is located on the front of the chassis, the memory devices can be subjected to maintenance and replacement.
摘要:
A fiber channel switch (hereinafter, FC-SW) connected to a plurality of communications devices is provided with a buffer for temporarily storing data received from servers via a first communications port, a trace data storage memory for storing trace data, and a microprocessor (MP) for sending data accumulated in the buffer to a storage control system. The MP stores the information about the data about the received data into the trace data storage memory as trace data, issues a write command to the storage control system if it is detected that trace data sending condition is satisfied, and reads out the trace data stored in the trace data storage memory and sends it to the storage control system.
摘要:
In a storage device accommodating a plurality of memory devices in a general-purpose chassis provided from both surface sides thereof, a cooling device is provided on the front of the memory devices. This cooling device is allowed to freely move to leave available the area in front of the memory devices, thereby enabling maintenance and replacement of the memory devices from the both surface sides of the chassis. With such a storage device of a type using a general-purpose chassis, and inserting therein a plurality of memory devices from the both surface sides thereof, even if a cooling device is located on the front of the chassis, the memory devices can be subjected to maintenance and replacement.
摘要:
First and second voltage buffers are added to an amplifying circuit including input and output amplifying stages in which a P-MOS transistor and an N-MOS transistor operate as a push-pull circuit. An input of the first voltage buffer is connected to an output of the amplifying circuit, and an output of the first voltage buffer is connected via a first phase compensating capacitor to a gate electrode of the P-MOS transistor, and is connected via a second phase compensating capacitor to a gate electrode of the N-MOS transistor. An input of the second voltage buffer is connected to the output of the amplifying circuit, and an output of the second voltage buffer is connected via a third phase compensating capacitor to the gate electrode of the P-MOS transistor, and is connected via a fourth phase compensating capacitor to the gate electrode of the N-MOS transistor.