利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.02 秒)

    Antireflection film, process for forming the antireflection film, and antireflection glass
    1.
    发明授权
    Antireflection film, process for forming the antireflection film, and antireflection glass 有权
    防反射膜，防反射膜的形成工艺和抗反射玻璃

    公开(公告)号：US06472012B2

    公开(公告)日：2002-10-29

    申请号：US09725478

    申请日：2000-11-30

    申请人： Takakazu Nakada ,  Kenichi Motoyama ,  Rie Gunji ,  Makoto Wakabayashi ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    发明人： Takakazu Nakada ,  Kenichi Motoyama ,  Rie Gunji ,  Makoto Wakabayashi ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    IPC分类号： B05D512

    CPC分类号： C03C17/30 ,  Y10T428/31612 ,  Y10T428/31663 ,  Y10T428/31667

    摘要： The present invention relates to an antireflection film effective for improving the transparency of an image display device such as a liquid crystal display (LCD), a plasma display (PDP), CRT, EL or a touch panel, to an optical product made of glass, such as a lens for eye glasses, and to an antireflection glass. The present invention is also directed to a process of coating a glass surface with a mixture comprising particular silicon compounds and thermosetting the coating film at a temperature ranging from 480 to 520° C. This process can be used to form an antireflection film on a glass surface having a refractive index ranging from 1.33 to 1.38 and a contact angle of water of at most 40 degrees.

    摘要翻译： 本发明涉及一种有效地提高液晶显示器（LCD），等离子体显示器（PDP），CRT，EL或触摸面板的图像显示装置的透明度的抗反射膜到由玻璃制成的光学产品 ，例如用于眼镜的透镜，以及抗反射玻璃。 本发明还涉及一种用包含特定硅化合物的混合物涂覆玻璃表面并在480-520℃温度下热固化该涂膜的方法。该方法可用于在玻璃上形成抗反射膜 表面的折射率范围为1.33〜1.38，水接触角在40度以下。

    Method of forming thick silica-based film
    2.
    发明授权
    Method of forming thick silica-based film 有权
    形成厚二氧化硅基膜的方法

    公开(公告)号：US07491651B2

    公开(公告)日：2009-02-17

    申请号：US11409086

    申请日：2006-04-24

    申请人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    发明人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    IPC分类号： H01L21/31

    CPC分类号： C09D183/02 ,  C08G77/08 ,  C09D183/04 ,  Y10T428/31663 ,  Y10T428/31667

    摘要： A silica-based coating film on a substrate surface is prepared by forming a reaction mixture comprising a tetraalkoxysilicon compound (A) and/or an alkyl/alkoxy silane compound (B), an alcohol (C), and oxalic acid (D), in such ratios that the amount of alcohol (C) ranges from 0.5 to 100 mols per mol of all alkoxy groups present in the silicon compounds (A) and (B), and the amount of oxalic acid (D) ranges from 0.2 to 2 mols per mol of all alkoxy groups in the silicon compounds (A) and (B), and while maintaining the mixture at a SiO2 concentration ranging from 0.5 to 11%, as calculated from silicon atoms in the mixture, by means of the alcohol (C); heating the reaction mixture at a temperature ranging from 50 to 180° C. until the total remaining amount of the silicon compounds (A) and (B) in the reaction mixture is not more than 5 mol %, to form a solution of a polysiloxane having a number average molecular weight, calculated on the basis of a polystyrene standard, ranging from 2,000 to 15,000; applying a coating fluid containing the solution of the polysiloxane onto a substrate surface; and thermally curing a coating film obtained by the application, at a temperature ranging from 80 to 600° C.

    摘要翻译： 通过形成包含四烷氧基硅化合物（A）和/或烷基/烷氧基硅烷化合物（B），醇（C）和草酸（D）的反应混合物来制备基材表面上的二氧化硅基涂膜， （C）的含量相对于硅化合物（A）和（B）中存在的全部烷氧基的摩尔量为0.5〜100摩尔，草酸的量（D）为0.2〜2 在硅化合物（A）和（B）中每摩尔全部烷氧基的摩尔数，并且在将混合物由混合物中的硅原子计算的SiO 2浓度保持在0.5至11％的范围内，同时通过醇（ C）; 在50〜180℃的温度下加热反应混合物，直到反应混合物中的硅化合物（A）和（B）的总剩余量不大于5mol％，形成聚硅氧烷 基于聚苯乙烯标准计算的数均分子量为2,000至15,000; 将含有聚硅氧烷溶液的涂布液涂布到基材表面上; 并在80〜600℃的温度下热固化涂布得到的涂膜。

    Method of forming thick silica-based film
    3.
    发明申请
    Method of forming thick silica-based film 有权
    形成厚二氧化硅基膜的方法

    公开(公告)号：US20060189163A1

    公开(公告)日：2006-08-24

    申请号：US11409086

    申请日：2006-04-24

    申请人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    发明人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C09D183/02 ,  C08G77/08 ,  C09D183/04 ,  Y10T428/31663 ,  Y10T428/31667

    摘要： A process for easily and efficiently forming a silica-based coating film having a film thickness of from 0.5 to 5 μm on a substrate, such a coating film, a coating fluid to be used for forming such a coating film, and a process for producing such a coating fluid, are presented. The present invention provides a process for forming a silica-based coating film, characterized by heating a reaction mixture comprising a silicon compound (A) represented by Si(OR)4 and/or a silicon compound (B) represented by R1nSi (OR2)4-n (wherein n is an integer of from 1 to 3), an alcohol (C) represented by R3CH2OH and oxalic acid (D) in specific ratios, at a temperature of from 50 to 180° C. in the absence of water, to form a solution of a polysiloxane having a number average molecular weight, as calculated as polystyrene, of from 2,000 to 15,000, applying a coating fluid containing such a solution on a substrate surface, and thermally curing a coating film obtained by such coating, at a temperature of from 80 to 600° C., and such a coating film having a film thickness of from 0.5 to 5 μm, a coating fluid to be used for such a coating film, and a process for producing such a coating fluid.

    摘要翻译： 在基材上容易且有效地形成膜厚为0.5〜5μm的二氧化硅系涂膜的方法，这样的涂膜，用于形成这样的涂膜的涂布液，以及其制造方法 提出了这种涂布液。 本发明提供一种形成二氧化硅基涂膜的方法，其特征在于，将由Si（OR）4 Si和/或硅化合物（B）表示的硅化合物（A） ）由R 1表示的Si（OR 2）4-n N（其中n是从 1〜3），由R 3 CH 2 OH表示的醇（C）和特定比例的草酸（D），温度为50〜180℃ 在不存在水的情况下，形成数均分子量为聚苯乙烯的聚硅氧烷的溶液为2000〜15000，在基材表面上涂布含有这种溶液的涂布液，热固化 通过这样的涂布得到的涂膜，在80〜600℃的温度下，以及这种膜厚为0.5〜5μm的涂膜，用于这种涂膜的涂布液， 用于生产这种涂布液。

    Method of forming thick silica-based film
    4.
    发明授权
    Method of forming thick silica-based film 有权
    形成厚二氧化硅基膜的方法

    公开(公告)号：US07211522B2

    公开(公告)日：2007-05-01

    申请号：US10474514

    申请日：2002-04-19

    申请人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    发明人： Kenichi Motoyama ,  Takakazu Nakada ,  Hitoshi Furusho ,  Hiroyoshi Fukuro

    IPC分类号： H01L21/31

    CPC分类号： C09D183/02 ,  C08G77/08 ,  C09D183/04 ,  Y10T428/31663 ,  Y10T428/31667

    摘要： The present invention provides a process for forming a silica-based coating film, characterized by heating a reaction mixture comprising a silicon compound (A) represented by Si (OR)4 and/or a silicon compound (B) represented by R1nSi (OR2)4−n (wherein n is an integer of from 1 to 3), an alcohol (C) represented by R3CH2OH and oxalic acid (D) in specific ratios, at a temperature of from 50 to 180° C. in the absence of water, to form a solution of a polysiloxane having a number average molecular weight, as calculated as polystyrene, of from 2,000 to 15,000, applying a coating fluid containing such a solution on a substrate surface, and thermally curing a coating film obtained by such coating, at a temperature of from 80 to 600° C., and such a coating film having a film thickness of from 0.5 to 5 μm, a coating fluid to be used for such a coating film, and a process for producing such a coating fluid.

    摘要翻译： 本发明提供一种形成二氧化硅基涂膜的方法，其特征在于，将由Si（OR）4 Si和/或硅化合物（B）表示的硅化合物（A） ）由R 1表示的Si（OR 2）4-n N（其中n是从 1〜3），由R 3 CH 2 OH表示的醇（C）和特定比例的草酸（D），温度为50〜180℃ 在不存在水的情况下，形成数均分子量为聚苯乙烯的聚硅氧烷的溶液为2000〜15000，在基材表面上涂布含有这种溶液的涂布液，热固化 通过这样的涂布得到的涂膜，在80〜600℃的温度下，以及这种膜厚为0.5〜5μm的涂膜，用于这种涂膜的涂布液， 用于生产这种涂布液。

    Process for forming a liquid crystal vertical alignment film
    6.
    发明授权
    Process for forming a liquid crystal vertical alignment film 失效
    用于形成液晶垂直取向膜的方法

    公开(公告)号：US5766673A

    公开(公告)日：1998-06-16

    申请号：US791058

    申请日：1997-01-28

    申请人： Tatsuya Nogami ,  Takakazu Nakada ,  Rie Sakai ,  Takeshi Hosoya

    发明人： Tatsuya Nogami ,  Takakazu Nakada ,  Rie Sakai ,  Takeshi Hosoya

    IPC分类号： C09D183/04 ,  C09D183/08 ,  G02F1/1337 ,  B05D5/12

    CPC分类号： G02F1/133711 ,  C09D183/04 ,  C09D183/08

    摘要： A process for forming a liquid crystal vertical alignment film on an electrode substrate surface, which comprises preparing a reaction mixture comprising a silicon compound (A) of the following formula (1): Si(OR).sub.4 (1) wherein R is a C.sub.1-5 alkyl group, a silicon compound (B) of the following formula (2): R.sup.1 Si(OR).sub.3 (2) wherein R.sup.1 is an unsubstituted or fluorinated C.sub.3-20 alkyl group, and R is as defined above, an alcohol (C) of the following formula (3): R.sup.2 CH.sub.2 OH (3) wherein R.sup.2 is a hydrogen atom, or an unsubstituted or substituted C.sub.1-12 alkyl group, and oxalic acid (D), in a ratio of from 0.05 to 0.43 mol of the silicon compound (B) per mol of the silicon compound (A), in a ratio of from 0.5 to 100 mol of the alcohol (C) per mol of the total alkoxy groups contained in the silicon compounds (A) and (B), and in a ratio of from 0.2 to 2 mol of the oxalic acid (D) per mol of the total alkoxy groups contained in the silicon compounds (A) and (B).

    摘要翻译： 一种在电极基板表面上形成液晶垂直取向膜的方法，其包括制备包含下式（1）的硅化合物（A）：Si（OR）4（1）的反应混合物，其中R为C1 5烷基，下式（2）的硅化合物（B）：R 1 Si（OR）3（2）其中R 1是未取代或氟化的C 3-20烷基，R如上定义，醇（ C）：R2为氢原子的R2CH2OH（3）或未取代或取代的C1-12烷基的R2CH2OH（3）和草酸（D）的比例为0.05〜0.43摩尔的 硅化合物（B）相对于硅化合物（A）和（B）中所含的总烷氧基的摩尔数为0.5〜100摩尔的醇（C），相对于硅化合物（A） 相对于硅化合物（A）和（B）中所含的总烷氧基的摩尔数为0.2〜2摩尔的草酸（D）。