公开(公告)号：US20090127666A1

公开(公告)日：2009-05-21

申请号：US12357919

申请日：2009-01-22

申请人： Kenichi WATANABE ,  Michiari KAWANO ,  Hiroshi NAMBA ,  Kazuo SUKEGAWA ,  Takumi HASEGAWA ,  Toyoji SAWADA ,  Junichi Mitani

发明人： Kenichi WATANABE ,  Michiari KAWANO ,  Hiroshi NAMBA ,  Kazuo SUKEGAWA ,  Takumi HASEGAWA ,  Toyoji SAWADA ,  Junichi Mitani

IPC分类号： H01L23/00

CPC分类号： G03F1/26 ,  G03F1/32 ,  H01L21/76811 ,  H01L21/76813 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/3025 ,  H01L2924/00

摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.

摘要翻译： 主壁部设置为围绕集成电路部。 在主壁部的各个角部和集成电路部之间设置有“L”形的副壁部。 因此，即使由于热处理等引起的应力集中，与常规的相比也不容易发生应力分散到主壁部和副壁部，因此层之间的剥离和裂纹不可能发生 艺术。 此外，即使在角部发生裂纹等，当主壁部和副壁部彼此结合时，来自外部的水分几乎不到达集成电路部。 因此，可以确保极高的耐湿性。

公开(公告)号：US20100240211A1

公开(公告)日：2010-09-23

申请号：US12764210

申请日：2010-04-21

申请人： Kenichi WATANABE ,  Michiari KAWANO ,  Hiroshi NAMBA ,  Kazuo SUKEGAWA ,  Takumi HASEGAWA ,  Toyoji SAWADA

发明人： Kenichi WATANABE ,  Michiari KAWANO ,  Hiroshi NAMBA ,  Kazuo SUKEGAWA ,  Takumi HASEGAWA ,  Toyoji SAWADA

IPC分类号： H01L21/768

CPC分类号： G03F1/26 ,  G03F1/32 ,  H01L21/76811 ,  H01L21/76813 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/3025 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.

摘要翻译： 一种制造半导体器件的方法，包括形成有集成电路的集成电路部分和包括围绕所述集成电路部分的金属膜的主壁部分的步骤包括以下步骤：在集成电路部分之间选择性地形成包括金属膜的副壁部分 电路部分和主壁部分，并联形成集成电路部分和主壁部分。 在主壁部的每个角部和所得到的半导体器件的集成电路部分之间设置有“L”形的副壁部。