公开(公告)号：US4948754A

公开(公告)日：1990-08-14

申请号：US238400

申请日：1988-08-31

申请人： Kenji Kondo ,  Hachiro Kunda ,  Toshio Sonobe

发明人： Kenji Kondo ,  Hachiro Kunda ,  Toshio Sonobe

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  Y10S148/054

摘要： According to the invention a method for making a semiconductor device comprising a step of preparing a semiconductor device having at least one semiconductor element formed in a semiconductor substrate, a plurality of electrode pads electrically connected to said semiconductor element and a passivation film provided on the surface thereof, a step of forming a leading layer on the surface of said electrode pads and a step of forming at least one bump electrode on the surface of said leading layer is provided and in this invention, since the prefabricated semiconductor device which may be sold by a standard supplier is used as the starting material and several steps for improving such a semiconductor device are applied thereto, the method for making a semiconductor device in which the whole manufacturing process thereof is simplified and the manufacturing cost thereof is remarkably reduced and moreover in which the developing cost thereof is greatly reduced development thereof can be speeded up, can be obtained.

摘要翻译： 根据本发明，制造半导体器件的方法包括制备半导体器件的步骤，所述半导体器件具有形成在半导体衬底中的至少一个半导体元件，多个与所述半导体元件电连接的电极焊盘和设置在该表面上的钝化膜 提供了在所述电极焊盘的表面上形成引导层的步骤，并且在所述引导层的表面上形成至少一个突起电极的步骤，并且在本发明中，由于可以被销售的预制半导体器件 使用标准供应商作为起始材料，并且应用了用于改进这种半导体器件的几个步骤，制造半导体器件的方法，其中整体制造工艺被简化并且其制造成本显着降低，而且其中 其开发成本大大降低，可以说是开发成本 可以得到。