公开(公告)号：US4810672A

公开(公告)日：1989-03-07

申请号：US29819

申请日：1987-03-25

申请人： Herbert Schwarzbauer

发明人： Herbert Schwarzbauer

IPC分类号： H01L21/52 ,  H01L21/60 ,  H01L23/482 ,  H01L21/20

CPC分类号： H01L24/83 ,  H01L23/4828 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27848 ,  H01L2224/29339 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83948 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10S148/012 ,  Y10S148/054

摘要： In order to secure electronic components, and particularly large-area power semiconductors, to a substrate, first a paste formed of metal powder and a solvent is applied in the form of a layer to a contacting layer of the component and/or a contact surface of the substrate. The layer of paste is then dried. When the paste has dried, the component is placed onto the substrate, whereupon the entire arrangement is heated to a relatively low sintering temperature preferably between 180.degree. C. and 250.degree. C., and with simultaneous application of a mechanical pressure of at least 900 N/cm.sup.2. A connection which is thus achieved by such a pressure sintering at relatively low sintering temperatures is particularly suitable for securing power semiconductors produced in MOS-technology to a substrate.

摘要翻译： 为了将电子部件特别是大面积功率半导体固定到基板上，首先将由金属粉末和溶剂形成的糊料以层的形式施加到部件和/或接触表面的接触层 的基底。 然后将该糊层干燥。 当浆料干燥时，将组分放置在基材上，由此整个布置被加热到相对低的烧结温度，优选在180℃和250℃之间，同时施加至少900的机械压力 N / cm2。 在相对较低的烧结温度下通过这种压力烧结实现的连接尤其适用于将在MOS技术中生产的功率半导体固定到衬底上。

公开(公告)号：US4727047A

公开(公告)日：1988-02-23

申请号：US251214

申请日：1981-04-06

申请人： Carl O. Bozler ,  John C. C. Fan ,  Robert W. McClelland

发明人： Carl O. Bozler ,  John C. C. Fan ,  Robert W. McClelland

IPC分类号： C30B19/00 ,  C30B25/02 ,  C30B25/04 ,  C30B33/00 ,  H01L21/20 ,  H01L21/263 ,  H01L21/84 ,  H01L25/04 ,  H01L31/04 ,  H01L31/042 ,  H01L31/043 ,  H01L31/0687 ,  H01L31/18 ,  H01S5/02 ,  H01L21/302

CPC分类号： H01L31/0687 ,  C30B25/04 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2007 ,  H01L31/043 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0217 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/902 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/915 ,  Y10S148/026 ,  Y10S148/048 ,  Y10S148/054 ,  Y10S148/09 ,  Y10S148/135 ,  Y10S438/977

摘要： A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated, and the substrate can optionally be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

摘要翻译： 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 该片材被分离，并且衬底可以可选地被重新使用。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。

公开(公告)号：US3978333A

公开(公告)日：1976-08-31

申请号：US461165

申请日：1974-04-15

申请人： Everett Crisman ,  William F. Armitage, Jr.

发明人： Everett Crisman ,  William F. Armitage, Jr.

IPC分类号： H01L31/0224 ,  H01L31/0368 ,  H01L31/07 ,  H01J39/12

CPC分类号： H01L31/03682 ,  H01L31/022425 ,  H01L31/0368 ,  H01L31/07 ,  Y02E10/546 ,  Y10S148/054 ,  Y10S148/139 ,  Y10S148/153

摘要： A photovoltaic device comprising a polycrystalline base having an electrically conductive grid affixed to the surface of the device to which illumination is to be applied, said grid effecting a rectifying junction with the base and at the same time functioning as a current carrying contact, said grid being arranged so that substantially all of the individual crystallites are contacted at least once thereby, while at the same time maintaining the coverage of the base by said grid to a minimum.

公开(公告)号：US3597289A

公开(公告)日：1971-08-03

申请号：US3597289D

申请日：1967-01-19

申请人： LICENTIA GMBH

发明人： KOHL GUNTER ,  HEIDRICH WERNER

IPC分类号： H01L21/306 ,  H01L7/50 ,  C23F17/00

CPC分类号： H01L21/30604 ,  Y10S148/054

摘要： A SEMICONDUCTOR BODY IS ETCHED BY APPLYING A CONTINUOUS STREAM OF ETCHING FLUID, A CONTINUOUS STREAM OF RINSING FLUID, AND A CONTINUOUS STREAM OF GAS TO THE SEMICODUCTOR BODY FROM THREE SPACED NOZZLES WHILE THE SEMICONDUCTOR BODY IS REPEATEDLY MOVED PAST THE NOZZLES.

公开(公告)号：US3585714A

公开(公告)日：1971-06-22

申请号：US76164668

申请日：1968-09-23

申请人： CHOU H LI

发明人： LI CHOU H

IPC分类号： C30B21/02 ,  C30B21/04 ,  H01L21/24 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L27/00 ,  H01L27/142 ,  H01L27/144 ,  H01L27/15 ,  H01L29/04 ,  H01L29/06 ,  H01L31/00 ,  H01L31/036 ,  H01L31/078 ,  H01L31/18 ,  H01L33/20 ,  B01J17/00 ,  H01L5/00

CPC分类号： C30B21/02 ,  C30B21/04 ,  H01L21/24 ,  H01L21/76 ,  H01L21/76232 ,  H01L21/763 ,  H01L27/00 ,  H01L27/142 ,  H01L27/1446 ,  H01L27/156 ,  H01L29/04 ,  H01L29/0661 ,  H01L31/00 ,  H01L31/036 ,  H01L31/0687 ,  H01L31/078 ,  H01L31/18 ,  H01L33/20 ,  Y02E10/544 ,  Y10S148/049 ,  Y10S148/054 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/117 ,  Y10S438/978 ,  Y10T83/0304

摘要： THIS DISCLOSURE DISCLOSES A NOVEL METHOD FOR MAKING NEW AND/OR IMPROVED SOLID-STATE DEVICES WHICH COMPRISES SURFACE-CONTOURING THE DEVICE JUNCTION OR ACTIVE REGION WHEREBY THE RESULTANT PERIPHERAL SURFACE OF THIS REGION IS DIFFERENTIALLY, AND OFTEN GREATLY, EXPANDED INTO A DESIRED GEOMETRICAL SHAPE OR SURFACE CONTOUR SHAPE, SUCH AS A CYLINDRICALLY OR ELLIPTICALLY CONCAVE SURFACE, ANOTHER SURFACE OF REVOLUTION OR, IN GENERAL, A SURFACE OF ORIENTED ARCUATE CROSS-SECTION. THIS INVENTION ALSO DESCRIBES METHODS THAT ARE PARTICULARLY USEFUL IN CONNECTION WITH THE SURFACE-CONTOURING OPERATION, FOR PRECISION SOLID-STATE MATERIAL SHAPING, SELECTIVE DEFECTIVE MATERIAL REMOVAL, NOVEL DOPING RESULTS, IMPROVED DEVICE MOUNTINGS, AND SIMPLE BUT RELIABLE ELECTRICAL INTERCONNECTIONS.

公开(公告)号：US3530114A

公开(公告)日：1970-09-22

申请号：US3530114D

申请日：1969-09-16

申请人： HOFFMANN LA ROCHE

发明人： MAEHR HUBERT ,  SCANNELL JAMES PARNELL ,  ZEITZ VERNON

IPC分类号： C07H17/075 ,  C07C47/18

CPC分类号： C07H17/075 ,  Y10S148/054

公开(公告)号：US3522118A

公开(公告)日：1970-07-28

申请号：US3522118D

申请日：1965-08-17

申请人： MOTOROLA INC

发明人： TAYLOR WILLIAM E ,  KLINK HOWARD N

IPC分类号： H01L21/3065 ,  H01L7/36 ,  H01L7/44

CPC分类号： H01L21/3065 ,  Y10S148/051 ,  Y10S148/054 ,  Y10S148/079 ,  Y10S438/974

公开(公告)号：US3501336A

公开(公告)日：1970-03-17

申请号：US3501336D

申请日：1967-12-11

申请人： TEXAS INSTRUMENTS INC

发明人： DYER LAWRENCE D ,  BRACKEN RONALD C ,  TAYLOR GUY W

IPC分类号： C30B33/00 ,  C30B33/12 ,  C23C11/06

CPC分类号： C30B29/06 ,  C30B33/12 ,  Y10S148/007 ,  Y10S148/051 ,  Y10S148/054 ,  Y10S438/974

公开(公告)号：US2672528A

公开(公告)日：1954-03-16

申请号：US9605949

申请日：1949-05-28

申请人： BELL TELEPHONE LABOR INC

发明人： WILLIAM SHOCKLEY

IPC分类号： H01L21/26 ,  H01L29/00 ,  H01L29/06 ,  H01L29/73

CPC分类号： H01L29/06 ,  H01L21/26 ,  H01L29/00 ,  H01L29/73 ,  Y10S148/054 ,  Y10S438/965

公开(公告)号：US5360745A

公开(公告)日：1994-11-01

申请号：US2808

申请日：1993-01-11

申请人： Hajime Sasaki ,  Hideo Naomoto

发明人： Hajime Sasaki ,  Hideo Naomoto

IPC分类号： H01L21/02 ,  C23C4/12 ,  H01L21/322 ,  H01L31/0368 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/03682 ,  C23C4/134 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/054

摘要： A thin-film solar cell includes a thin-film active layer with a p-n Junction and a heat-resistant substrate for mechanically supporting the active layer, which substrate is formed by a plasma coating method. In the plasma coating method, a source material of the substrate is melted with a high-temperature plasma and sprayed onto a base plate by a high-speed gas jet. Since the substrate formed by the plasma coating method is porous, even if an inexpensive material including a lot of impurities is used as a material of the substrate, the impurities are collected in pores of the substrate and never sprout out of the substrate breaking through the thin-film active layer.

摘要翻译： 薄膜太阳能电池包括具有p-n结的薄膜有源层和用于机械支撑有源层的耐热基板，该基板通过等离子体涂覆法形成。 在等离子体涂覆方法中，用高温等离子体熔化基板的源材料，并通过高速气体喷射喷射到基板上。 由于通过等离子体涂覆法形成的基板是多孔的，即使使用包含大量杂质的廉价材料作为基板的材料，杂质被收集在基板的孔中，并且不会从基板突出穿过基板 薄膜活性层。