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    Surface acoustic wave device and method for manufacturing the same
    1.
    发明授权
    Surface acoustic wave device and method for manufacturing the same 有权
    表面声波装置及其制造方法

    公开(公告)号：US07154207B2

    公开(公告)日：2006-12-26

    申请号：US10922032

    申请日：2004-08-19

    申请人： Kenji Sakaguchi ,  Kenji Akiyama

    发明人： Kenji Sakaguchi ,  Kenji Akiyama

    IPC分类号： H03H9/25

    CPC分类号： H03H9/059

    摘要： A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, and a connecting portion that is electrically connected with the IDT electrode. The surface acoustic wave device further includes a wiring portion, a portion of which is disposed on the connecting portion, and a bump disposed on the wiring portion. The connecting portion includes a comb-shaped portion at an end of the connecting portion on which the wiring portion is disposed.

    摘要翻译： 表面声波装置包括压电基板，叉指式换能器（IDT）电极和与IDT电极电连接的连接部。 表面声波装置还包括布置在连接部分上的布线部分和布置在布线部分上的凸块。 连接部分包括在布置有布线部分的连接部分的端部处的梳状部分。

    Surface acoustic wave device and method for manufacturing the same
    2.
    发明申请
    Surface acoustic wave device and method for manufacturing the same 有权
    表面声波装置及其制造方法

    公开(公告)号：US20050046307A1

    公开(公告)日：2005-03-03

    申请号：US10922032

    申请日：2004-08-19

    申请人： Kenji Sakaguchi ,  Kenji Akiyama

    发明人： Kenji Sakaguchi ,  Kenji Akiyama

    IPC分类号： H03H9/25 ,  H03H3/08 ,  H03H9/05 ,  H03H9/145

    CPC分类号： H03H9/059

    摘要： A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, and a connecting portion that is electrically connected with the IDT electrode. The surface acoustic wave device further includes a wiring portion, a portion of which is disposed on the connecting portion, and a bump disposed on the wiring portion. The connecting portion includes a comb-shaped portion at an end of the connecting portion on which the wiring portion is disposed.

    摘要翻译： 表面声波装置包括压电基板，叉指式换能器（IDT）电极和与IDT电极电连接的连接部。 表面声波装置还包括布置在连接部分上的布线部分和布置在布线部分上的凸块。 连接部分包括在布置有布线部分的连接部分的端部处的梳状部分。

    ELECTRONIC APPARATUS
    4.
    发明申请
    ELECTRONIC APPARATUS 审中-公开
    电子设备

    公开(公告)号：US20100120478A1

    公开(公告)日：2010-05-13

    申请号：US12436896

    申请日：2009-05-07

    申请人： Yoshihiro NOMURA ,  Katsuhiko Ikeda ,  Toshihisa Yamamoto ,  Tomonori Sunazuka ,  Kenji Akiyama

    发明人： Yoshihiro NOMURA ,  Katsuhiko Ikeda ,  Toshihisa Yamamoto ,  Tomonori Sunazuka ,  Kenji Akiyama

    IPC分类号： H04M1/00

    CPC分类号： H04M1/0241 ,  H04M1/0235 ,  H04M1/67

    摘要： An electronic apparatus includes: at least two casings changeable in positional relationship between the at least two casings from a first state to a second state that is different from the first state; an input module configured to input a command by touch, a first detector configured to detect a start of a transition from the first state to the second state; a second detector configured to detect a completion of the transition; and an input controller configured to disable input through the input module in a time between the start detected by the first detector and the completion detected by the second detector.

    摘要翻译： 一种电子设备包括：至少两个壳体可以在至少两个壳体之间从第一状态到第二状态之间的位置关系是可变的，其不同于第一状态; 被配置为通过触摸输入命令的输入模块，被配置为检测从所述第一状态到所述第二状态的转变的开始的第一检测器; 第二检测器，被配置为检测所述转换的完成; 以及输入控制器，被配置为在由所述第一检测器检测的开始和由所述第二检测器检测到的完成之间的时间内禁止通过所述输入模块的输入。

    Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer
    6.
    发明授权
    Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer 有权
    副产物，气相生长装置，外延晶片制造装置，外延晶片制造方法和外延晶片

    公开(公告)号：US07270708B2

    公开(公告)日：2007-09-18

    申请号：US10493144

    申请日：2002-11-27

    申请人： Tomosuke Yoshida ,  Takeshi Arai ,  Kenji Akiyama ,  Hiroki Ose

    发明人： Tomosuke Yoshida ,  Takeshi Arai ,  Kenji Akiyama ,  Hiroki Ose

    IPC分类号： C30B25/12

    CPC分类号： C30B25/12 ,  C23C16/4405 ,  C23C16/4583

    摘要： A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage structure having an upper stage pocket (11a) for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket (11b) formed on a lower stage of a center side from the upper stage pocket (11a). A hole (12) penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket (11b).

    摘要翻译： 一种在气相生长中支撑半导体衬底（W）的感受体（10），其中，在所述基座的上表面上形成有凹穴（11），以将半导体衬底（W）布置在其内部。 袋（11）具有两级结构，其具有用于支撑半导体衬底（W）的外周边缘部分的上级槽口（11a）和形成在半导体衬底（W）的下级上的下级槽口 中心侧的上侧袋（11a）。 贯穿底座后表面的孔（12）形成在下层袋（11b）中。