摘要:
A method for producing a silicate-based oxynitride phosphor, comprising a step of firing a raw material mixture while contacting the raw material mixture with a Si-containing gas containing gas phase Si to generate a silicate-based oxynitride phosphor.
摘要:
A crystalline material represented by M12a(M2bLc)M3dOyNx wherein M1 is at least one element selected from alkali metals, M2 is at least one element selected from Ca, Sr, and Ba, M3 is at least one element selected from Si and Ge, L is at least one element selected from rare earth elements, Bi, and Mn, a is 0.9 to 1.5, b is 0.8 to 1.2, c is 0.005 to 0.2, d is 0.8 to 1.2, x is 0.001 to 1.0, and y is 3.0 to 4.0 or less.
摘要:
There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.
摘要:
There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.
摘要:
The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7, (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001≦a≦0.3, b is a numerical value satisfying 0≦b≦0.5, and x is a numerical value satisfying 0≦x≦0.2.
摘要:
The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7 , (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001≦a≦0.3, b is a numerical value satisfying 0≦b≦0.5, and x is a numerical value satisfying 0≦x≦0.2.
摘要翻译:本发明提供一种发射绿色荧光的荧光体,其在由蓝光到近紫外光的波长范围内的激发光有效地激发,其发射强度随着激发光的波长的变化而不显着变化,并且是 制造容易。 荧光体包括由以下通式(A)表示的化学结构:A(M1-a-xEuaMnx)L(Si1-bGeb)2O7,(A)其中A是选自Li,Na和 K,M是选自Mg,Ca,Sr,Ba和Zn中的一种或多种元素,L是选自Ga,Al,Sc,Y,La,Gd和Lu中的一种或多种元素,a是满足 0.001 @ a @ 0.3,b是满足0 @ b @ 0.5的数值,x是满足0 @ x @ 0.2的数值。
摘要:
Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要:
Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.