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    Process for semiconductor device etch damage reduction using hydrogen-containing plasma
    1.
    发明授权
    Process for semiconductor device etch damage reduction using hydrogen-containing plasma 失效
    使用含氢等离子体的半导体器件蚀刻损伤降低的工艺

    公开(公告)号：US5425843A

    公开(公告)日：1995-06-20

    申请号：US137438

    申请日：1993-10-15

    申请人： Kenneth D. Saul ,  Valerie A. Bach

    发明人： Kenneth D. Saul ,  Valerie A. Bach

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/31138 ,  Y10S148/003 ,  Y10S438/913

    摘要： A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.

    摘要翻译： 根据本发明的方法蚀刻多层结构，通常是半导体器件，并且通过集中在由其形成的损坏的蚀刻半导体器件的后蚀刻处理来满足上述现有需要。 这种蚀刻后处理是通过将损坏的硅暴露于形成气体的下游等离子体来实现的，其导致氧化物再生长显着增加并且显着更高的栅极氧化物质量水平。 在进行本发明的方法中，作为后蚀刻形成气体等离子体，优选使用约1体积％至约15体积％的H 2，约85至约99体积％的N 2。