公开(公告)号：US20090214198A1

公开(公告)日：2009-08-27

申请号：US12372079

申请日：2009-02-17

Applicant: Kensuke TAKAHASHI ,  Shinichi Sakuramoto

Inventor： Kensuke TAKAHASHI ,  Shinichi Sakuramoto

IPC: G02F1/00

CPC classification number: H01S5/0683 ,  H01S5/0427 ,  H01S5/06825 ,  H04B10/504 ,  H04B10/564

Abstract: A optical transmitter includes a light device provided a driving current and for emitting light on the bases of the driving current; a light measure for measuring an output light level of the light device; a controller for controlling the driving current to the light device and for changing the measured output light power level into a set output light power level of the light device; a current measure for measuring a level of the driving current to the light device; an abnormality detector for detecting an aged deterioration of the light device on the bases of the current level of the driving current by the current measure and the measured output light power level by the light measure; and an adjuster for reducing the set output light power level in the controller when the abnormality detector detects the aged deterioration of the light device.

Abstract translation: 光发射机包括提供驱动电流并用于在驱动电流的基础上发光的光器件; 用于测量光装置的输出光电平的光测量; 用于控制到所述灯装置的驱动电流并将所测量的输出光功率电平改变成所述灯装置的设定输出光功率电平的控制器; 用于测量到光装置的驱动电流的电平的当前测量; 一个异常检测器，用于根据当前测量的驱动电流的当前电平和通过光测量测量的输出光功率电平来检测光器件的老化变质; 以及调节器，用于当异常检测器检测到灯装置的老化变差时，降低控制器中的设定输出光功率电平。

公开(公告)号：US20120241707A1

公开(公告)日：2012-09-27

申请号：US13236729

申请日：2011-09-20

Applicant: Kensuke TAKAHASHI

Inventor： Kensuke TAKAHASHI

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1683

Abstract: According to one embodiment, a nonvolatile memory device includes a word line interconnect layer, a bit line interconnect layer, and a pillar. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending in a second direction. The pillar is disposed between each of the word lines and each of the bit lines. The pillar includes a current selection film and a plurality of variable resistance films stacked on the current selection film. One variable resistance film includes a metal and either oxygen or nitrogen. Remainder of the variable resistance films include the metal, either oxygen or nitrogen, and a highly electronegative substance having electronegativity higher than electronegativity of the metal. A concentration of highly electronegative substance in the remainder of the variable resistance films is different among the variable resistance films.

Abstract translation: 根据一个实施例，非易失性存储器件包括字线互连层，位线互连层和柱。 字线互连层包括沿第一方向延伸的多个字线。 位线互连层包括沿第二方向延伸的多个位线。 支柱设置在每个字线和每个位线之间。 支柱包括电流选择膜和堆叠在当前选择膜上的多个可变电阻膜。 一个可变电阻膜包括金属和氧或氮。 可变电阻膜的剩余包括金属，氧或氮，以及具有高于金属的电负性的电负性的高电负性物质。 可变电阻膜的其余部分中高度负电性物质的浓度在可变电阻膜中是不同的。

公开(公告)号：US20110068314A1

公开(公告)日：2011-03-24

申请号：US12790320

申请日：2010-05-28

Applicant: Kensuke TAKAHASHI ,  Takashi Shigeoka

Inventor： Kensuke TAKAHASHI ,  Takashi Shigeoka

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L29/868 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

Abstract: A semiconductor memory device of an embodiment includes: a cathode electrode formed of a p-type semiconductor material; a resistance change film being in contact with the cathode electrode; and an anode electrode being contact with the resistance change film.

Abstract translation: 实施例的半导体存储器件包括：由p型半导体材料形成的阴极电极; 与阴极电极接触的电阻变化膜; 并且阳极电极与电阻变化膜接触。