公开(公告)号：US11744081B1

公开(公告)日：2023-08-29

申请号：US17315139

申请日：2021-05-07

Applicant: Kepler Computing Inc.

Inventor： Niloy Mukherjee ,  Ramamoorthy Ramesh ,  Sasikanth Manipatruni ,  James Clarkson ,  FNU Atiquzzaman ,  Gabriel Antonio Paulius Velarde ,  Jason Y. Wu

IPC: H10B51/20 ,  H10B51/10 ,  H10B51/40

CPC classification number: H10B51/20 ,  H10B51/10 ,  H10B51/40

Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.

公开(公告)号：US11716858B1

公开(公告)日：2023-08-01

申请号：US17315143

申请日：2021-05-07

Applicant: Kepler Computing Inc.

Inventor： Niloy Mukherjee ,  Ramamoorthy Ramesh ,  Sasikanth Manipatruni ,  James Clarkson ,  Fnu Atiquzzaman ,  Gabriel Antonio Paulius Velarde ,  Jason Y. Wu

IPC: H10B53/30 ,  H01L27/115 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L28/75

Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.

公开(公告)号：US11659714B1

公开(公告)日：2023-05-23

申请号：US17315111

申请日：2021-05-07

Applicant: Kepler Computing Inc.

Inventor： Niloy Mukherjee ,  Ramamoorthy Ramesh ,  Sasikanth Manipatruni ,  James Clarkson ,  FNU Atiquzzaman ,  Gabriel Antonio Paulius Velarde ,  Jason Y. Wu

IPC: H01L27/11507 ,  H01L27/11502 ,  H01L49/02 ,  H01L27/11597 ,  H01L27/11592 ,  H01L27/11587

CPC classification number: H01L27/11597 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11587 ,  H01L27/11592 ,  H01L28/55 ,  H01L28/57 ,  H01L28/75

Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.