公开(公告)号：US20090317942A1

公开(公告)日：2009-12-24

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

发明人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

IPC分类号： H01L51/40 ,  H01L21/336

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20100127252A1

公开(公告)日：2010-05-27

申请号：US12692560

申请日：2010-01-22

申请人： Keun-kyu SONG ,  Young-min Kim ,  Tae-young Choi

发明人： Keun-kyu SONG ,  Young-min Kim ,  Tae-young Choi

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area.Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 本发明的实施例提供一种薄膜晶体管衬底，包括：绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层，形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔相对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极，形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此，本发明提供了TFT的特性提高的有机TFT基板。

公开(公告)号：US20100276681A1

公开(公告)日：2010-11-04

申请号：US12835655

申请日：2010-07-13

申请人： Keun-kyu SONG ,  Bo-Sung Kim

发明人： Keun-kyu SONG ,  Bo-Sung Kim

IPC分类号： H01L33/00 ,  H01L51/10

CPC分类号： H01L27/3274 ,  H01L27/3276 ,  H01L51/0078 ,  H01L51/0545

摘要： A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.

摘要翻译： 显示装置包括绝缘基板; 形成在所述绝缘基板上的多个栅极布线，所述多个栅极布线包括栅电极; 覆盖所述多个栅极线的栅极绝缘层; 形成在所述栅极绝缘层上的透明电极层，所述透明电极层包括源极电极和漏电极，所述源电极和漏电极围绕所述栅电极设置并彼此间隔开，以限定其间设置的沟道区域; 多个数据线，覆盖所述透明电极层的预定部分并与所述多个栅极线绝缘地交叉以限定像素; 以及形成在每个像素的沟道区上的有机半导体层，所述有机半导体层的预定部分与所述源电极，所述漏电极和所述栅电极可操作地连接，以形成具有改进的特性和新结构的晶体管 。