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公开(公告)号:US20200227474A1
公开(公告)日:2020-07-16
申请号:US16246360
申请日:2019-01-11
申请人: Kevin O'Brien , Christopher Wiegand , Tofizur Rahman , Noriyuki Sato , Gary Allen , James Pellegren , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Benjamin Buford , Ian Young
发明人: Kevin O'Brien , Christopher Wiegand , Tofizur Rahman , Noriyuki Sato , Gary Allen , James Pellegren , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Benjamin Buford , Ian Young
摘要: A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.