Process for holography using reference beam having correlated phase content
    1.
    发明授权
    Process for holography using reference beam having correlated phase content 有权
    使用具有相关相位含量的参考光束进行全息术的方法

    公开(公告)号:US06191875B1

    公开(公告)日:2001-02-20

    申请号:US09363336

    申请日:1999-07-29

    IPC分类号: G03H112

    CPC分类号: G11C13/042 G03H2001/2675

    摘要: An improved process for holography is provided, in which the reference beam used for storage and readout has a correlated phase content. In particular, it was found that reference beams having random phase content limited the attainable storage density and the accuracy of readout of stored holograms due to uncontrolled fluctuations in the correlation selectivity. By contrast, a reference beam having correlated phase content provides accurate shift selectivity, the ability to tailor the reference beam spectrum to minimize crosstalk between neighboring holograms, and mitigation of limitations inherent in the holographic system or holographic medium. Improved storage density and readout accuracy are thereby attained.

    摘要翻译: 提供了一种用于全息术的改进方法,其中用于存储和读出的参考光束具有相关的相位内容。 特别地,发现具有随机相位含量的参考光束由于相关选择性的不受控制的波动而限制了可获得的存储密度和存储的全息图的读出精度。 相反,具有相关相位内容的参考光束提供精确的偏移选择性,定制参考光束光谱以最小化相邻全息图之间的串扰的能力以及全息系统或全息介质中固有的限制的减轻。 由此可以获得改善的存储密度和读出精度。

    Field-effect transistors with high-sensitivity gates
    2.
    发明授权
    Field-effect transistors with high-sensitivity gates 有权
    具有高灵敏度门的场效应晶体管

    公开(公告)号:US06724056B1

    公开(公告)日:2004-04-20

    申请号:US10413966

    申请日:2003-04-15

    IPC分类号: H01L2976

    摘要: A field-effect transistor (FET) includes a source electrode, a drain electrode, a gate electrode, a gate dielectric, and a semiconductor layer that functions as an active channel of the transistor. The active channel is configured to carry a current between the source and drain electrodes and has a conductivity responsive to voltages applied the gate electrode. The gate dielectric is located between the gate electrode and the semiconductor layer and includes a quasi-1D charge or spin density wave material.

    摘要翻译: 场效应晶体管(FET)包括用作晶体管的有源沟道的源电极,漏电极,栅电极,栅极电介质和半导体层。 有源沟道被配置为在源电极和漏电极之间承载电流,并且具有响应施加于栅电极的电压的导电性。 栅电介质位于栅电极和半导体层之间,并包括准1D电荷或自旋密度波材料。

    Device for cooling fluid, method for cooling fluid

    公开(公告)号:US10184697B2

    公开(公告)日:2019-01-22

    申请号:US15257240

    申请日:2016-09-06

    IPC分类号: F25B21/00

    摘要: The invention provides a method for cooling fluid having the steps of supplying a fluid at a first temperature T1, raising the temperature of the fluid to a second temperature T2 through contact with an electric field, contacting the fluid with a heat exchanger to decrease its temperature to a third temperature T3, removing the electric field to decrease the temperature of the fluid to a fourth temperature T4, and applying a heat load to the fluid to increase the temperature of the fluid to T1. Also provided is a system for cooling fluid having a closed loop having a first region subject to an electric field, a second region in contact with a heat exchanger, a third region remote from the electric field, and a fourth region contacting a heat load.

    Voltage regulators
    6.
    发明授权
    Voltage regulators 有权
    电压调节器

    公开(公告)号:US07700006B2

    公开(公告)日:2010-04-20

    申请号:US10159449

    申请日:2002-05-31

    IPC分类号: H01B1/00 H01B1/02 G05F5/00

    CPC分类号: G05F1/147

    摘要: An apparatus includes an object formed of a quasi-1D crystalline material that is capable of supporting a free sliding density wave state. The apparatus also includes first and second input terminals that connect across a portion of the object and first and second output terminals that connect across the same portion of the object.

    摘要翻译: 一种装置包括由能够支持自由的滑动密度波状态的准1D晶体材料形成的物体。 该装置还包括连接在物体的一部分上的第一和第二输入端子以及连接在物体的相同部分上的第一和第二输出端子。