公开(公告)号：US20070161258A1

公开(公告)日：2007-07-12

申请号：US11552877

申请日：2006-10-25

申请人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

发明人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

IPC分类号： H01L21/31

CPC分类号： H01L21/3003 ,  H01L21/28176 ,  H01L21/76828 ,  H01L21/76829

摘要： In an embodiment, a method of fabricating a semiconductor device having a hydrogen source layer includes forming an interlayer insulating layer on a semiconductor substrate. A hydrogen source layer is formed on the substrate having the interlayer insulating layer. A thermal annealing process is performed on the substrate having the hydrogen source layer such that hydrogen inside the hydrogen source layer is diffused to a surface of the semiconductor substrate. A conductive pattern is formed on the substrate having the thermally-treated hydrogen source layer. The conductive pattern may be a metal interconnection.

摘要翻译： 在一个实施例中，制造具有氢源层的半导体器件的方法包括在半导体衬底上形成层间绝缘层。 在具有层间绝缘层的基板上形成氢源层。 在具有氢源层的基板上进行热退火处理，使得氢源层内的氢扩散到半导体基板的表面。 在具有热处理氢源层的基板上形成导电图案。 导电图案可以是金属互连。

公开(公告)号：US20070273029A1

公开(公告)日：2007-11-29

申请号：US11839478

申请日：2007-08-15

申请人： Sung-Jin KIM ,  Seung-Hyun CHANG ,  Ki-Heum NAM

发明人： Sung-Jin KIM ,  Seung-Hyun CHANG ,  Ki-Heum NAM

IPC分类号： H01L23/52 ,  G03C5/00 ,  H01L21/3205

CPC分类号： G03F1/00 ,  G03F1/70

摘要： A photo mask set for forming multi-layered interconnection lines and a semiconductor device fabricated using the same includes a first photo mask for forming lower interconnection lines and a second photo mask for forming upper interconnection lines. The first and second photo masks have lower opaque patterns parallel with each other and upper opaque patterns that overlap the lower opaque patterns. In this case, ends of the lower opaque patterns are located on a straight line that crosses the lower opaque patterns. As a result, when upper interconnection lines are formed using the second photo mask, poor photo resist patterns can be prevented from being formed despite the focusing of reflected light.

摘要翻译： 用于形成多层互连线的光掩模组和使用其形成的半导体器件包括用于形成下互连线的第一光掩模和用于形成上互连线的第二光掩模。 第一和第二光掩模具有彼此平行的较低的不透明图案和与下部不透明图案重叠的上部不透明图案。 在这种情况下，下部不透明图案的端部位于与下部不透明图案交叉的直线上。 结果，当使用第二光掩模形成上互连线时，即使反射光聚焦，也可以防止形成差的光刻胶图形。