公开(公告)号：US20080224817A1

公开(公告)日：2008-09-18

申请号：US11686781

申请日：2007-03-15

申请人： Kim R. Vellore ,  Harald Herchen ,  Brian C. Lue

发明人： Kim R. Vellore ,  Harald Herchen ,  Brian C. Lue

IPC分类号： H01C7/02

CPC分类号： G01K1/14 ,  H01L21/67103 ,  H01L21/67248

摘要： A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.

摘要翻译： 用于加热半导体晶片的装置包括布置成朝向晶片传导热量的加热元件。 加热元件可以沿着加热元件路径延伸。 RTD传感器回路可以沿着RTD传感器路径延伸。 RTD传感器路径可以沿着加热元件路径定位，以测量对应于加热元件的温度。 RTD传感器回路可以测量加热元件的平均温度。 RTD传感器的部分可以在加热元件的部分之间交错。 加热元件路径可以在加热元件路径的部分之间布置有间隙，并且RTD传感器路径的部分可以位于间隙内，以使RTD传感器回路与加热元件交错。 RTD传感器回路可以包括耐金属氧化并沿RTD传感器路径延伸的软金属。