公开(公告)号：US06707104B2

公开(公告)日：2004-03-16

申请号：US10277744

申请日：2002-10-23

申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

IPC分类号： H01L2978

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

摘要翻译： 横向高击穿电压晶体管包括彼此分离的在p型硅衬底中形成的n +漏极区域和n +源极区域，形成在与衬底绝缘的沟道上的栅极电极 ，形成在漏极区域中的n +漏极接触区域，经由漏极接触区域与漏极区域电连接的漏极布线，与源极区域形成的ap +衬底接触区域，以及与源极区域电连接的源极布线 并且还经由衬底接触区域连接到半导体层。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

公开(公告)号：US06989568B2

公开(公告)日：2006-01-24

申请号：US10748187

申请日：2003-12-31

申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

摘要翻译： 横向高击穿电压晶体管包括在硅衬底中形成的漏极 - 漏区和n + 彼此形成在与衬底绝缘的沟道上的栅极电极，形成在漏极区域中的n +漏极接触区域，经由漏极接触区域电连接到漏极区域的漏极布线， 与源极区域形成的基板接触区域以及与源极区域电连接并且还经由基板接触区域与半导体层连接的源极布线。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

公开(公告)号：US06489653B2

公开(公告)日：2002-12-03

申请号：US09746223

申请日：2000-12-26

申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

IPC分类号： H01L2978

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

摘要翻译： 横向高击穿电压晶体管包括形成在p硅衬底中的n沟道区和n +源极区，其彼此分离，形成在与衬底绝缘的沟道上的栅电极，n +漏极接触区域 形成在所述漏极区域中的漏极布线，经由所述漏极接触区域电连接到所述漏极区域的漏极布线，与所述源极区域接触形成的p +基板接触区域以及与所述源极区域电连接并且还连接到所述半导体层通孔 基板接触区域。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。