公开(公告)号：US20140084913A1

公开(公告)日：2014-03-27

申请号：US14097332

申请日：2013-12-05

Applicant: King Abdullah University of Science and Technology

Inventor： Jurgen Kosel ,  Jian Sun

IPC: G01R33/09 ,  H01L43/02 ,  G01R33/07

CPC classification number: G01R33/095 ,  G01R33/0052 ,  G01R33/07 ,  G01R33/072 ,  H01L43/02

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Abstract translation: 公开了磁传感器，以及制造和使用它们的方法。 在一些实施例中，EMR效应传感器包括半导体层。 在一些实施例中，EMR效应传感器可以包括基本上耦合到半导体层的导电层。 在一些实施例中，EMR效应传感器可以包括耦合到导电层的电压引线。 在一些实施例中，电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 在一些实施例中，EMR效应传感器可以包括耦合到半导体层的第二电压引线。 在一些实施例中，第二电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 还公开了具有相同或相似结构的霍尔效应传感器的实施例。

公开(公告)号：US20170038439A9

公开(公告)日：2017-02-09

申请号：US14097332

申请日：2013-12-05

Applicant: King Abdullah University of Science and Technology

Inventor： Jurgen Kosel ,  Jian Sun

IPC: G01R33/09 ,  H01L43/02 ,  G01R33/07

CPC classification number: G01R33/095 ,  G01R33/0052 ,  G01R33/07 ,  G01R33/072 ,  H01L43/02

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Abstract translation: 公开了磁传感器，以及制造和使用它们的方法。 在一些实施例中，EMR效应传感器包括半导体层。 在一些实施例中，EMR效应传感器可以包括基本上耦合到半导体层的导电层。 在一些实施例中，EMR效应传感器可以包括耦合到导电层的电压引线。 在一些实施例中，电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 在一些实施例中，EMR效应传感器可以包括耦合到半导体层的第二电压引线。 在一些实施例中，第二电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 还公开了具有相同或相似结构的霍尔效应传感器的实施例。

公开(公告)号：US10379175B2

公开(公告)日：2019-08-13

申请号：US14097332

申请日：2013-12-05

Applicant: King Abdullah University of Science and Technology

Inventor： Jurgen Kosel ,  Jian Sun

IPC: G01R33/09 ,  G01R33/07 ,  H01L43/02 ,  G01R33/00

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.