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公开(公告)号：US20140084913A1
公开(公告)日：2014-03-27
申请号：US14097332
申请日：2013-12-05
Inventor： Jurgen Kosel , Jian Sun
CPC classification number: G01R33/095 , G01R33/0052 , G01R33/07 , G01R33/072 , H01L43/02
Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
Abstract translation: 公开了磁传感器，以及制造和使用它们的方法。 在一些实施例中，EMR效应传感器包括半导体层。 在一些实施例中，EMR效应传感器可以包括基本上耦合到半导体层的导电层。 在一些实施例中，EMR效应传感器可以包括耦合到导电层的电压引线。 在一些实施例中，电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 在一些实施例中，EMR效应传感器可以包括耦合到半导体层的第二电压引线。 在一些实施例中，第二电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 还公开了具有相同或相似结构的霍尔效应传感器的实施例。
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公开(公告)号：US20180174788A1
公开(公告)日：2018-06-21
申请号：US15735213
申请日：2016-06-14
Inventor： Mohammed Affan Zidan , Jurgen Kosel , Khaled Nabil Salama
CPC classification number: H01H59/0009 , H01H49/00 , H01H59/00 , H01H2059/0018 , H01H2059/0072 , H01H2201/038
Abstract: A microelectromechanical system (MEMS) switch with liquid dielectric and a method of fabrication thereof are provided. In the context of the MEMS switch, a MEMS switch is provided including a cantilevered source switch, a first actuation gate disposed parallel to the cantilevered source switch, a first drain disposed parallel to a movable end of the cantilevered source switch, and a liquid dielectric disposed within a housing of the microelectromechanical system switch.
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Patent Agency Ranking
公开(公告)号：US10768058B2
公开(公告)日：2020-09-08
申请号：US15522080
申请日：2015-10-27
Inventor： Ahmed Alfadhel , Bodong Li , Jurgen Kosel
Abstract: A magnetic nanocomposite device is described herein for a wide range of sensing applications. The device utilizes the permanent magnetic behavior of the nanowires to allow operation without the application of an additional magnetic field to magnetize the nanowires, which simplifies miniaturization and integration into microsystems. In addition, the nanocomposite benefits from the high elasticity and easy patterning of the polymer-based material, leading to a corrosion-resistant, flexible material that can be used to realize extreme sensitivity. In combination with magnetic sensor elements patterned underneath the nanocomposite, the nanocomposite device realizes highly sensitive and power efficient flexible artificial cilia sensors for flow measurement or tactile sensing.
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公开(公告)号：US20170038439A9
公开(公告)日：2017-02-09
申请号：US14097332
申请日：2013-12-05
Inventor： Jurgen Kosel , Jian Sun
CPC classification number: G01R33/095 , G01R33/0052 , G01R33/07 , G01R33/072 , H01L43/02
Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
Abstract translation: 公开了磁传感器，以及制造和使用它们的方法。 在一些实施例中，EMR效应传感器包括半导体层。 在一些实施例中，EMR效应传感器可以包括基本上耦合到半导体层的导电层。 在一些实施例中，EMR效应传感器可以包括耦合到导电层的电压引线。 在一些实施例中，电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 在一些实施例中，EMR效应传感器可以包括耦合到半导体层的第二电压引线。 在一些实施例中，第二电压引线可以被配置为提供用于由电压测量电路进行测量的电压。 还公开了具有相同或相似结构的霍尔效应传感器的实施例。
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公开(公告)号：US10559443B2
公开(公告)日：2020-02-11
申请号：US15735213
申请日：2016-06-14
Inventor： Mohammed Affan Zidan , Jurgen Kosel , Khaled Nabil Salama
Abstract: A microelectromechanical system (MEMS) switch with liquid dielectric and a method of fabrication thereof are provided. In the context of the MEMS switch, a MEMS switch is provided including a cantilevered source switch, a first actuation gate disposed parallel to the cantilevered source switch, a first drain disposed parallel to a movable end of the cantilevered source switch, and a liquid dielectric disposed within a housing of the microelectromechanical system switch.
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公开(公告)号：US10379175B2
公开(公告)日：2019-08-13
申请号：US14097332
申请日：2013-12-05
Inventor： Jurgen Kosel , Jian Sun
Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
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公开(公告)号：US20170336272A1
公开(公告)日：2017-11-23
申请号：US15522080
申请日：2015-10-27
Inventor： Ahmed Alfadhel , Bodong Li , Jurgen Kosel
Abstract: A magnetic nanocomposite device is described herein for a wide range of sensing applications. The device utilizes the permanent magnetic behavior of the nanowires to allow operation without the application of an additional magnetic field to magnetize the nanowires, which simplifies miniaturization and integration into microsystems. In5 addition, the nanocomposite benefits from the high elasticity and easy patterning of the polymer-based material, leading to a corrosion-resistant, flexible material that can be used to realize extreme sensitivity. In combination with magnetic sensor elements patterned underneath the nanocomposite, the nanocomposite device realizes highly sensitive and power efficient flexible artificial cilia sensors for flow measurement or tactile sensing.
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