公开(公告)号：US20200335162A1

公开(公告)日：2020-10-22

申请号：US16922255

申请日：2020-07-07

Applicant: King Abdullah University of Science and Technology

Inventor： Rawan NAOUS ,  Khaled Nabil SALAMA

IPC: G11C13/00 ,  H03K19/20 ,  H03K19/21

Abstract: In accordance with the present disclosure, one embodiment includes a memristor that is caused to be in a particular resistance state by a voltage applied across terminals of the memristor. A first logical input and a second logical input that are below a threshold voltage of the memristor are applied to a first terminal of the memristor. A first control input and a second control input are applied to a second terminal of the memristor. A logical output is determined based on a resistance state of the memristor.