公开(公告)号：US10167191B2

公开(公告)日：2019-01-01

申请号：US15685957

申请日：2017-08-24

Applicant: Kionix, Inc.

Inventor： Martin Heller ,  Jonah deWall ,  Andrew Hocking ,  Kristin Lynch ,  Sangtae Park

IPC: B81C1/00

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

公开(公告)号：US20180282154A1

公开(公告)日：2018-10-04

申请号：US15685957

申请日：2017-08-24

Applicant: Kionix, Inc.

Inventor： Martin Heller ,  Jonah deWall ,  Andrew Hocking ,  Kristin Lynch ,  Sangtae Park

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0197 ,  B81C2201/05 ,  B81C2203/0118

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.