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公开(公告)号：US20180282153A1
公开(公告)日：2018-10-04
申请号：US15677994
申请日：2017-08-15
Applicant: Kionix, Inc.
Inventor： Martin Heller , Toma Fujita
Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
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公开(公告)号：US11527376B2
公开(公告)日：2022-12-13
申请号：US16521682
申请日：2019-07-25
Applicant: Kionix, Inc.
Inventor： Scott A. Miller , Nicole Kerness , Randy Phillips , Sangtae Park , Martin Heller , Mizuho Okada , Andrew Hocking , Wenting Gu
Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.
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公开(公告)号：US20190322522A1
公开(公告)日：2019-10-24
申请号：US16392224
申请日：2019-04-23
Applicant: Kionix, Inc.
Inventor： Andrew Hocking , Martin Heller , Wenting Gu
IPC: B81B3/00 , H01L41/113 , H01L41/187 , B81C1/00
Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.
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公开(公告)号：US10793427B2
公开(公告)日：2020-10-06
申请号：US15677994
申请日：2017-08-15
Applicant: Kionix, Inc.
Inventor： Martin Heller , Toma Fujita
Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
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公开(公告)号：US10167191B2
公开(公告)日：2019-01-01
申请号：US15685957
申请日：2017-08-24
Applicant: Kionix, Inc.
Inventor： Martin Heller , Jonah deWall , Andrew Hocking , Kristin Lynch , Sangtae Park
IPC: B81C1/00
Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.
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Patent Agency Ranking
公开(公告)号：US11634317B2
公开(公告)日：2023-04-25
申请号：US16392224
申请日：2019-04-23
Applicant: Kionix, Inc.
Inventor： Andrew Hocking , Martin Heller , Wenting Gu
IPC: B81B3/00 , H01L41/113 , B81C1/00 , H01L41/187
Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.
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公开(公告)号：US10766767B2
公开(公告)日：2020-09-08
申请号：US16407045
申请日：2019-05-08
Applicant: Kionix, Inc.
Inventor： Martin Heller , Toma Fujita
Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
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公开(公告)号：US20200048078A1
公开(公告)日：2020-02-13
申请号：US16655127
申请日：2019-10-16
Applicant: Kionix, Inc.
Inventor： Martin Heller , Toma Fujita
Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
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公开(公告)号：US20190263656A1
公开(公告)日：2019-08-29
申请号：US16407045
申请日：2019-05-08
Applicant: Kionix, Inc.
Inventor： Martin Heller , Toma Fujita
Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
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公开(公告)号：US20180282154A1
公开(公告)日：2018-10-04
申请号：US15685957
申请日：2017-08-24
Applicant: Kionix, Inc.
Inventor： Martin Heller , Jonah deWall , Andrew Hocking , Kristin Lynch , Sangtae Park
IPC: B81C1/00
CPC classification number: B81C1/00269 , B81C2201/013 , B81C2201/0171 , B81C2201/0197 , B81C2201/05 , B81C2203/0118
Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.
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