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    Bipolar transistor type MEMS pressure sensor and preparation method thereof
    1.
    发明授权
    Bipolar transistor type MEMS pressure sensor and preparation method thereof 有权

    公开(公告)号：US11965797B1

    公开(公告)日：2024-04-23

    申请号：US18372687

    申请日：2023-09-25

    Applicant: Wuxi Sencoch Semiconductor Co., Ltd.

    Inventor： Tongqing Liu

    IPC: G01L9/06 ,  B81C1/00

    CPC classification number: G01L9/065 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2201/0171

    Abstract: The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.

    Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion
    4.
    发明授权
    Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion 有权
    通过电荷载流子耗尽在半导体微机械谐振器中的温度补偿

    公开(公告)号：US09319020B2

    公开(公告)日：2016-04-19

    申请号：US13276931

    申请日：2011-10-19

    Applicant: Farrokh Ayazi ,  Ashwin Samarao

    Inventor： Farrokh Ayazi ,  Ashwin Samarao

    IPC: H03H9/24 ,  H03H3/013 ,  H03H3/007 ,  H03H9/02 ,  B81B3/00

    CPC classification number: H03H3/0076 ,  B81B3/0081 ,  B81C2201/0171 ,  H03H9/02448 ,  H03H9/2463 ,  H03H2009/02496 ,  H03H2009/2415

    Abstract: A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.

    Abstract translation: 半导体谐振器具有在第一端和第二端之间延伸的厚度的衬底和沿衬底的厚度的pn结，形成自由电荷载流子耗尽区。 在另一个实施例中，半导体谐振器具有在退化水平下掺杂晶格的衬底，使得自由电荷载流子的流动可以最小化。 还公开了通过在共振器的衬底的厚度内产生基于pn结的自由电荷载流子耗尽区域来补偿半导体谐振器的温度系数的方法。

    MEMS Device with Constant Capacitance
    5.
    发明申请
    MEMS Device with Constant Capacitance 有权
    具有恒定电容的MEMS器件

    公开(公告)号：US20150235779A1

    公开(公告)日：2015-08-20

    申请号：US14182839

    申请日：2014-02-18

    Applicant: Analog Devices Global

    Inventor： Check F. Lee ,  Raymond C. Goggin ,  Padraig L. Fitzgerald

    IPC: H01H1/00 ,  B81C1/00 ,  H01H59/00 ,  B81B7/00

    CPC classification number: H01H1/0036 ,  B81B7/0064 ,  B81B2201/014 ,  B81B2207/03 ,  B81B2207/07 ,  B81B2207/115 ,  B81C1/00698 ,  B81C2201/0171 ,  B81C2203/075 ,  H01H59/0009 ,  H01P1/127

    Abstract: A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substrate—i.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.

    Abstract translation: MEMS装置在输入节点和输出节点之间具有衬底，输入节点，输出节点和MEMS开关。 开关选择性地连接输入节点和输出节点，当开关打开时，输出节点和输出节点电隔离。 该装置还具有衬底中的输入掺杂区域和衬底中的输出掺杂区域。 输入掺杂区域和输出掺杂区域通过衬底电隔离，即它们之间的电阻在两个掺杂区域之间抑制不可忽略的电流。 输入掺杂区域与输入节点形成输入电容，而输出掺杂区域与输出节点形成输出电容。

    Temperature Compensation in a Semiconductor Micromechanical Resonator Via Charge Carrier Depletion
    6.
    发明申请
    Temperature Compensation in a Semiconductor Micromechanical Resonator Via Charge Carrier Depletion 有权
    半导体微机械谐振器中的温度补偿通过电荷载体耗尽

    公开(公告)号：US20130099629A1

    公开(公告)日：2013-04-25

    申请号：US13276931

    申请日：2011-10-19

    Applicant: Farrokh Ayazi ,  Ashwin Samarao

    Inventor： Farrokh Ayazi ,  Ashwin Samarao

    IPC: H01L41/04

    CPC classification number: H03H3/0076 ,  B81B3/0081 ,  B81C2201/0171 ,  H03H9/02448 ,  H03H9/2463 ,  H03H2009/02496 ,  H03H2009/2415

    Abstract: A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.

    Abstract translation: 半导体谐振器具有在第一端和第二端之间延伸的厚度的衬底和沿衬底的厚度的pn结，形成自由电荷载流子耗尽区。 在另一个实施例中，半导体谐振器具有在退化水平下掺杂晶格的衬底，使得自由电荷载流子的流动可以最小化。 还公开了通过在共振器的衬底的厚度内产生基于pn结的自由电荷载流子耗尽区域来补偿半导体谐振器的温度系数的方法。

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