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1.发明申请公开(公告)号：US20220081615A1
公开(公告)日：2022-03-17
申请号：US17194929
申请日：2021-03-08
Applicant: Kioxia Corporation
Inventor： Akira ENDO , Yasushi NAKASAKI , Masayasu MIYATA
IPC: C09K13/06 , H01L21/311 , H01L27/11582
Abstract: An etching composition for silicon nitride includes: a phosphoric acid solution; and an additive containing a silane compound having a composition represented by General formula: Si(R1)(R2)(R3)(R4) wherein R1, R2, R3, and R4 are monovalent groups, at least one of R1, R2, R3, or R4 is an alkoxy group, and at least another one of R1, R2, R3, or R4 is a functional group containing two or more oxygen.
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