公开(公告)号：US20220013529A1

公开(公告)日：2022-01-13

申请号：US17198688

申请日：2021-03-11

Applicant: Kioxia Corporation

Inventor： Daisuke MATSUBAYASHI ,  Masumi SAITOH

IPC: H01L27/115

Abstract: A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.

公开(公告)号：US20220271093A1

公开(公告)日：2022-08-25

申请号：US17470839

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Daisuke MATSUBAYASHI ,  Kensuke OTA

IPC: H01L27/28 ,  H01L51/05

Abstract: A memory device according to an embodiment includes a fluid layer extending in a first direction, a particle in the fluid layer, a first control electrode made of a first material, a first insulating film provided between the fluid layer and the first control electrode, a second control electrode made of a second material and provided to be spaced apart from the first control electrode in the first direction, a second insulating film provided between the fluid layer and the second control electrode, a third control electrode made of a third material different from the first material and the second material and provided between the first control electrode and the second control electrode, and a third insulating film provided between the fluid layer and the third control electrode.

公开(公告)号：US20230413510A1

公开(公告)日：2023-12-21

申请号：US18161463

申请日：2023-01-30

Applicant: Kioxia Corporation

Inventor： Daisuke MATSUBAYASHI

IPC: H10B12/00

CPC classification number: H10B12/20 ,  H10B12/30

Abstract: A semiconductor device of embodiments includes: an oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a gate insulating layer provided between the third region and the gate electrode; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; and a p-type semiconductor layer in contact with the third region and separated from the gate electrode, the first electrode, and the second electrode, the third region being provided between the p-type semiconductor layer and the gate electrode.