公开(公告)号：US20230253311A1

公开(公告)日：2023-08-10

申请号：US18300700

申请日：2023-04-14

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Atsushi KATO ,  Hiroaki MATSUDA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L23/53238

Abstract: A semiconductor device includes an interconnect including (i) a first layer, and (ii) a second layer provided on the first layer and including copper. The device also includes a plug provided on the interconnect and including (a) a third layer including titanium and nitrogen, and (b) a fourth layer provided on the third layer and including tungsten. A concentration of chlorine in the third layer is less than or equal to 5.0 × 1021 atoms/cm3, and a concentration of oxygen at the interface between the third layer and the fourth layer is less than or equal to 5.0 × 1021 atoms/cm3.

公开(公告)号：US20220076965A1

公开(公告)日：2022-03-10

申请号：US17190827

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Hiroaki MATSUDA ,  Masayuki KITAMURA

IPC: H01L21/3215 ,  H01L27/11582

Abstract: A semiconductor device includes a stacked body including a plurality of conductive layers insulated from each other, a semiconductor layer extending into the stacked body, and a charge storage layer located between one of the conductive layers and the semiconductor layer. The conductive layer contains tungsten and an auxiliary material. An amount of the auxiliary material is smaller than an amount of tungsten, and an oxide free energy of the auxiliary material is smaller than an oxide free energy of tungsten.

公开(公告)号：US20210265266A1

公开(公告)日：2021-08-26

申请号：US17183617

申请日：2021-02-24

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Atsushi KATO ,  Hiroaki MATSUDA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285

Abstract: A semiconductor device includes an interconnect including (i) a first layer, and (ii) a second layer provided on the first layer and including copper. The device also includes a plug provided on the interconnect and including (a) a third layer including titanium and nitrogen, and (b) a fourth layer provided on the third layer and including tungsten. A concentration of chlorine in the third layer is less than or equal to 5.0×1021 atoms/cm3, and a concentration of oxygen at the interface between the third layer and the fourth layer is less than or equal to 5.0×1021 atoms/cm3.