-
公开(公告)号:US20220301599A1
公开(公告)日:2022-09-22
申请号:US17475482
申请日:2021-09-15
Applicant: Kioxia Corporation
Inventor: Tomoya SANUKI , Xu LI , Masayuki MIURA , Takayuki MIYAZAKI , Toshio FUJISAWA , Hiroto NAKAI , Hideko MUKAIDA , Mie MATSUO
IPC: G11C5/14 , H01L27/11556 , H01L27/11582 , H02M3/158 , G11C16/30
Abstract: A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.