公开(公告)号：US20240422978A1

公开(公告)日：2024-12-19

申请号：US18740746

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Kazuki MATSUNAGA ,  Shinya OKUDA ,  Shuichi TSUBATA

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor device includes a stacked film including electrode layers and first insulating films alternately stacked in a first direction, wherein the stacked film includes a first portion with a non-stepped shape and a second portion with a stepped shape; a second insulating film provided on the second portion; a columnar portion extending through the first portion and including a charge storage layer; a third insulating film extending through the second portion and the second insulating film; a plug provided on any of the electrode layers in the second portion; and a first region provided in the second portion and the second insulating film and including an element. A concentration of the element in the first region is higher than a concentration of the element in a region outside the first region in the second insulating film.