公开(公告)号：US20250063730A1

公开(公告)日：2025-02-20

申请号：US18938719

申请日：2024-11-06

Applicant: Kioxia Corporation

Inventor： Shinya OKUDA

IPC: H10B43/20 ,  H10B41/10 ,  H10B41/20 ,  H10B43/10 ,  H10B43/27 ,  H10B43/50

Abstract: A semiconductor device includes a stacked film including a plurality of electrode layers and a plurality of insulating layers alternately stacked in a first direction and a columnar portion including a charge storage layer and a first semiconductor layer and extending in the first direction in the stacked film. The device further includes a second semiconductor layer provided on the stacked film and the columnar portion, and at least a part of regions in the second semiconductor layer contains phosphorus having an atomic concentration of 1.0×1021/cm3 or more and hydrogen having an atomic concentration of 1.0×1019/cm3 or less.

公开(公告)号：US20240008273A1

公开(公告)日：2024-01-04

申请号：US18151921

申请日：2023-01-09

Applicant: Kioxia Corporation

Inventor： Rikyu IKARIYAMA ,  Shinya OKUDA ,  Takuya KONNO

IPC: H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor device manufacturing method includes forming a stacked film with alternating first-type sacrificial layers and second-type sacrificial layers, then removing the first-type sacrificial layers from the stacked film to leave the second-type sacrificial layers with spaces therebetween. The second-type sacrificial layers are then each replaced with an insulating layer after removing the first-type sacrificial layers. After the second-type sacrificial layers are replaced with the insulating layer, a conductive layer is formed inside the spaces formed by removing the first-type sacrificial layers.

公开(公告)号：US20210151372A1

公开(公告)日：2021-05-20

申请号：US16951584

申请日：2020-11-18

Applicant: Kioxia Corporation

Inventor： Shinya OKUDA ,  Kei WATANABE ,  Kosuke HORIBE

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00

Abstract: In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

公开(公告)号：US20210082749A1

公开(公告)日：2021-03-18

申请号：US16807025

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Kazuki TAKAHASHI ,  Shinya OKUDA

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes depositing a first insulation film in a via hole of a semiconductor substrate and above a first surface thereof, the semiconductor substrate having a circuit substrate on a second surface thereof, depositing a second insulation film having a covering property lower than the first insulation film in the via hole and above the first surface, and removing the first and second insulation films deposited at the bottom of the via hole by anisotropic etching.

公开(公告)号：US20230299004A1

公开(公告)日：2023-09-21

申请号：US17930278

申请日：2022-09-07

Applicant: Kioxia Corporation

Inventor： Shinya OKUDA

IPC: H01L23/532 ,  H01L23/00 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L24/08 ,  H01L24/03 ,  H01L24/05 ,  H01L21/324 ,  H01L21/0228 ,  H01L2224/03616 ,  H01L2224/0812 ,  H01L2224/05147

Abstract: A semiconductor device includes a substrate 15, a first insulating film 13 provided above the substrate 15, a second insulating film 14 disposed between the substrate 15 and the first insulating film 13, a first metal pad 41 provided in the first insulating film 13, and a second metal pad 38 provided in the second insulating film 14, the second metal pad 38 being bonded to the first metal pad 41. A concentration of silicon atoms in a bonded portion B of the first metal pad 41 and the second metal pad 38 is greater than a concentration of silicon atoms in a first portion P1 of the first metal pad 41 and is greater than a concentration of silicon atoms in a second portion P2 of the second metal pad 38.

公开(公告)号：US20220406810A1

公开(公告)日：2022-12-22

申请号：US17682976

申请日：2022-02-28

Applicant: Kioxia Corporation

Inventor： Shinya OKUDA

IPC: H01L27/11578 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11565

Abstract: A semiconductor device includes a stacked film including a plurality of electrode layers and a plurality of insulating layers alternately stacked in a first direction and a columnar portion including a charge storage layer and a first semiconductor layer and extending in the first direction in the stacked film. The device further includes a second semiconductor layer provided on the stacked film and the columnar portion, and at least a part of regions in the second semiconductor layer contains phosphorus having an atomic concentration of 1.0×1021/cm3 or more and hydrogen having an atomic concentration of 1.0×1019/cm3 or less.

公开(公告)号：US20240422978A1

公开(公告)日：2024-12-19

申请号：US18740746

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Kazuki MATSUNAGA ,  Shinya OKUDA ,  Shuichi TSUBATA

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor device includes a stacked film including electrode layers and first insulating films alternately stacked in a first direction, wherein the stacked film includes a first portion with a non-stepped shape and a second portion with a stepped shape; a second insulating film provided on the second portion; a columnar portion extending through the first portion and including a charge storage layer; a third insulating film extending through the second portion and the second insulating film; a plug provided on any of the electrode layers in the second portion; and a first region provided in the second portion and the second insulating film and including an element. A concentration of the element in the first region is higher than a concentration of the element in a region outside the first region in the second insulating film.

公开(公告)号：US20220293529A1

公开(公告)日：2022-09-15

申请号：US17471059

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Kosuke HORIBE ,  Kei WATANABE ,  Shinya OKUDA

IPC: H01L23/532 ,  H01L27/11582 ,  H01L21/768

Abstract: A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.

公开(公告)号：US20220084907A1

公开(公告)日：2022-03-17

申请号：US17116037

申请日：2020-12-09

Applicant: Kioxia Corporation

Inventor： Ippei KUME ,  Kazuhiko NAKAMURA ,  Shinya OKUDA

IPC: H01L23/48 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  H01L23/528

Abstract: A device includes a substrate having a first-face and a second-face. An electrode is provided in a through hole that penetrates through the substrate between the first-face and the second-face. A first-insulator is provided in the substrate and protrudes in a radial direction from an opening end of the through hole on a side close to the second-face to a center of the through hole as viewed from above the first-face. A second-insulator protrudes in the radial direction from the first-insulator as viewed from above the first-face, is thinner than the first-insulator, and is in contact with the electrode. A third-insulator is provided between an inner wall of the through hole and the electrode, and includes a first-portion that is in contact with the first-insulator and a second-portion that is in contact with the inner wall of the through hole and is closer to the second-face than the first-portion.