公开(公告)号：US20240389328A1

公开(公告)日：2024-11-21

申请号：US18664450

申请日：2024-05-15

Applicant: Kioxia Corporation

Inventor： Kazuma HAYASHI ,  Shinya ARAI ,  Keisuke SUDA ,  Masakazu SAWANO

IPC: H10B43/35 ,  H01L23/528 ,  H10B43/10

Abstract: In general, according to one embodiment, a semiconductor device includes: a plurality of first conductor layers arranged apart from each other in a first direction; a memory pillar extending in the first direction and including a portion crossing a respective one of the first conductor layers, the portion functioning as a memory cell; and a first conductor member surrounding, in a first direction perspective, the first conductor layers and the memory pillar, the first conductor member crossing an extension of at least one of the first conductor layers. The first conductor member includes a first direction first end having, in the first direction perspective, a dent and rise profile in a longitudinal direction of the first conductor member.