公开(公告)号：US20240215459A1

公开(公告)日：2024-06-27

申请号：US18476628

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.