公开(公告)号：US20240099020A1

公开(公告)日：2024-03-21

申请号：US18345266

申请日：2023-06-30

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Katsuyoshi KOMATSU

IPC: H10B61/00

CPC classification number: H10B61/10

Abstract: According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.

公开(公告)号：US20240215459A1

公开(公告)日：2024-06-27

申请号：US18476628

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

公开(公告)号：US20240114811A1

公开(公告)日：2024-04-04

申请号：US18460515

申请日：2023-09-01

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Yosuke MATSUSHIMA

IPC: H10N70/00 ,  H10B63/00 ,  H10B63/10

CPC classification number: H10N70/841 ,  H10B63/10 ,  H10B63/84 ,  H10N70/881

Abstract: According to one embodiment, a nonvolatile semiconductor memory includes a first electrode and a second electrode spaced from the first electrode. A memory element and a switching element are disposed between the first electrode and the second electrode. The switching element includes a tunnel insulating film enabling carrier tunneling, and the tunnel insulating film includes yttrium and oxygen and at least one of tantalum, titanium, and zirconium Ti, and Zr.