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公开(公告)号:US20240099153A1
公开(公告)日:2024-03-21
申请号:US18454960
申请日:2023-08-24
Applicant: Kioxia Corporation
Inventor: Takeshi IWASAKI , Zhu QI , Katsuyoshi KOMATSU , Jieqiong ZHANG
Abstract: A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.
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公开(公告)号:US20240074324A1
公开(公告)日:2024-02-29
申请号:US18456397
申请日:2023-08-25
Applicant: Kioxia Corporation
Inventor: Rina NOMOTO , Hiroyuki KANAYA , Yusuke MUTO , Takeshi IWASAKI
CPC classification number: H10N50/10 , G11C11/161 , H10B61/00 , H10N50/85 , G11C11/1673 , G11C11/1675
Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.
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公开(公告)号:US20240215467A1
公开(公告)日:2024-06-27
申请号:US18476635
申请日:2023-09-28
Applicant: Kioxia Corporation
Inventor: Hiroki KAWAI , Takeshi IWASAKI , Katsuyoshi KOMATSU , Rina NOMOTO , Zhu QI , Takayuki SASAKI
CPC classification number: H10N70/8828 , G11C5/06 , H10B63/80 , H10N70/883
Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).
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公开(公告)号:US20240215459A1
公开(公告)日:2024-06-27
申请号:US18476628
申请日:2023-09-28
Applicant: Kioxia Corporation
Inventor: Takeshi IWASAKI , Yosuke MATSUSHIMA , Makoto ONIZAKI , Katsuyoshi KOMATSU , Masakazu GOTO , Hiroki KAWAI , Rina NOMOTO , Kenta CHOKAWA , Zhu QI , Tadaomi DAIBOU
Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.
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公开(公告)号:US20240098962A1
公开(公告)日:2024-03-21
申请号:US18165595
申请日:2023-02-07
Applicant: Kioxia Corporation
Inventor: Daisuke WATANABE , Akifumi GAWASE , Takeshi IWASAKI , Kazuhiro KATONO , Yusuke MUTO , Yusuke MIKI , Akinori KIMURA
IPC: H10B10/00 , H01L29/786
CPC classification number: H10B10/125 , H01L29/78693
Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.
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公开(公告)号:US20220238801A1
公开(公告)日:2022-07-28
申请号:US17400912
申请日:2021-08-12
Applicant: Kioxia Corporation
Inventor: Katsuyoshi KOMATSU , Takeshi IWASAKI , Tadaomi DAIBOU , Hiroki KAWAI
Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).
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公开(公告)号:US20240215259A1
公开(公告)日:2024-06-27
申请号:US18478213
申请日:2023-09-29
Applicant: Kioxia Corporation
Inventor: Yuya SATO , Masakazu GOTO , Hiroki KAWAI , Takeshi IWASAKI , Katsuyoshi KOMATSU
IPC: H10B61/00
CPC classification number: H10B61/10
Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a switching layer provided between the first conductive layer and the third conductive layer; and a variable resistance layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, and an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of carbon (C), boron (B), nitrogen (N), silicon (Si), and tin (Sn).
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公开(公告)号:US20240099020A1
公开(公告)日:2024-03-21
申请号:US18345266
申请日:2023-06-30
Applicant: Kioxia Corporation
Inventor: Takeshi IWASAKI , Yosuke MATSUSHIMA , Katsuyoshi KOMATSU
IPC: H10B61/00
CPC classification number: H10B61/10
Abstract: According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.
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公开(公告)号:US20230085722A1
公开(公告)日:2023-03-23
申请号:US17687130
申请日:2022-03-04
Applicant: Kioxia Corporation
Inventor: Jieqiong ZHANG , Katsuyoshi KOMATSU , Tadaomi DAIBOU , Takeshi IWASAKI , Hiroki TOKUHIRA , Hiroki KAWAI , Hiroshi TAKEHIRA
IPC: H01L45/00
Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.
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