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    STORAGE DEVICE
    1.
    发明公开
    STORAGE DEVICE 审中-公开

    公开(公告)号：US20240099153A1

    公开(公告)日：2024-03-21

    申请号：US18454960

    申请日：2023-08-24

    Applicant: Kioxia Corporation

    Inventor： Takeshi IWASAKI ,  Zhu QI ,  Katsuyoshi KOMATSU ,  Jieqiong ZHANG

    IPC: H10N50/10 ,  G11C5/08 ,  H10B61/00 ,  H10N50/85

    CPC classification number: H10N50/10 ,  G11C5/08 ,  H10B61/10 ,  H10N50/85

    Abstract: A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.

    MEMORY DEVICE
    3.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20240215467A1

    公开(公告)日：2024-06-27

    申请号：US18476635

    申请日：2023-09-28

    Applicant: Kioxia Corporation

    Inventor： Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU ,  Rina NOMOTO ,  Zhu QI ,  Takayuki SASAKI

    IPC: H10N70/00 ,  G11C5/06 ,  H10B63/00

    CPC classification number: H10N70/8828 ,  G11C5/06 ,  H10B63/80 ,  H10N70/883

    Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).

    MEMORY DEVICE
    4.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20240215459A1

    公开(公告)日：2024-06-27

    申请号：US18476628

    申请日：2023-09-28

    Applicant: Kioxia Corporation

    Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

    IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

    CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

    Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20220238801A1

    公开(公告)日：2022-07-28

    申请号：US17400912

    申请日：2021-08-12

    Applicant: Kioxia Corporation

    Inventor： Katsuyoshi KOMATSU ,  Takeshi IWASAKI ,  Tadaomi DAIBOU ,  Hiroki KAWAI

    IPC: H01L45/00 ,  G11C13/00

    Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

    MEMORY DEVICE
    7.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20240215259A1

    公开(公告)日：2024-06-27

    申请号：US18478213

    申请日：2023-09-29

    Applicant: Kioxia Corporation

    Inventor： Yuya SATO ,  Masakazu GOTO ,  Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU

    IPC: H10B61/00

    CPC classification number: H10B61/10

    Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a switching layer provided between the first conductive layer and the third conductive layer; and a variable resistance layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, and an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of carbon (C), boron (B), nitrogen (N), silicon (Si), and tin (Sn).

    MEMORY DEVICE
    8.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20240099020A1

    公开(公告)日：2024-03-21

    申请号：US18345266

    申请日：2023-06-30

    Applicant: Kioxia Corporation

    Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Katsuyoshi KOMATSU

    IPC: H10B61/00

    CPC classification number: H10B61/10

    Abstract: According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.

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