公开(公告)号：US20230276626A1

公开(公告)日：2023-08-31

申请号：US17898944

申请日：2022-08-30

Applicant: Kioxia Corporation

Inventor： Hideto TAKEKIDA ,  Keisuke SUDA ,  Naoyuki IIDA ,  Kohei NYUI ,  Ryo HIKIDA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11556 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11556 ,  H01L23/5283

Abstract: A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.