公开(公告)号：US20240290666A1

公开(公告)日：2024-08-29

申请号：US18588275

申请日：2024-02-27

Applicant: Kioxia Corporation

Inventor： Makoto MORIYAMA ,  Tsubasa IMAMURA ,  Takaki HASHIMOTO ,  Ai FURUBAYASHI

IPC: H01L21/66 ,  G01B11/06 ,  G01K11/00 ,  H01L21/311

CPC classification number: H01L22/26 ,  G01B11/06 ,  G01K11/00 ,  H01L21/31116 ,  H01L21/31144

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a substrate, the substrate including: a workpiece film; and a mask pattern formed on the workpiece film, the mask pattern including a light shielding layer that shields light; and etching the workpiece film exposed from the mask pattern, in which the etching of the workpiece film includes: irradiating a back surface of the substrate with light before the etching; observing first interference light generated by interference between first reflected light reflected by the back surface of the substrate and second reflected light transmitted through the substrate and reflected by a bottom surface of the workpiece film; observing second interference light generated by interference between the first reflected light and third reflected light transmitted through the substrate and the workpiece film and reflected without being transmitted through an upper surface of the workpiece film; calculating a thickness of the workpiece film based on the first interference light and the second interference light; and performing the etching under an etching condition based on the thickness of the workpiece film calculated from the first interference light and the second interference light.