公开(公告)号：US20220084984A1

公开(公告)日：2022-03-17

申请号：US17188308

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Michihito KONO ,  Takashi IZUMIDA ,  Tadayoshi UECHI ,  Takeshi SHIMANE

IPC: H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor memory device, includes: a first region including a memory cell array; and a second region including a peripheral circuit. The second region includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes: a semiconductor region between the first and second surfaces; an n-type semiconductor region provided on the first surface and higher in donor concentration than the semiconductor region; a damaged region provided on the second surface; and a p-type semiconductor region provided between the damaged region and the n-type semiconductor region, closer to the second surface than the n-type semiconductor region in a direction from the first surface toward the second surfaces of the semiconductor substrate, and higher in acceptor concentration than the semiconductor region.