公开(公告)号：US12176236B2

公开(公告)日：2024-12-24

申请号：US17694145

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Wu Li ,  Tsubasa Imamura ,  Yuto Itagaki ,  Minki Chou

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.