公开(公告)号：US11651969B2

公开(公告)日：2023-05-16

申请号：US16819348

申请日：2020-03-16

Applicant: Kioxia Corporation

Inventor： Chihiro Abe ,  Toshiyuki Sasaki ,  Hisataka Hayashi ,  Mitsuhiro Omura ,  Tsubasa Imamura

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/0206 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/3341 ,  H01L27/11556 ,  H01L27/11582

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US20210020450A1

公开(公告)日：2021-01-21

申请号：US16819348

申请日：2020-03-16

Applicant: Kioxia Corporation

Inventor： Chihiro ABE ,  Toshiyuki Sasaki ,  Hisataka Hayashi ,  Mitsuhiro Omura ,  Tsubasa Imamura

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US12176236B2

公开(公告)日：2024-12-24

申请号：US17694145

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Wu Li ,  Tsubasa Imamura ,  Yuto Itagaki ,  Minki Chou

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

公开(公告)号：US11024510B2

公开(公告)日：2021-06-01

申请号：US16801879

申请日：2020-02-26

Applicant: KIOXIA CORPORATION

Inventor： Tsubasa Imamura

IPC: H01L21/308 ,  H01L21/033

Abstract: According to one embodiment, a pattern forming method includes forming an organic layer on a first layer. The organic layer has a first region having a first thickness and a first width, a second region having a second thickness and a second width, and a third region located between the first region and the second region. The third region has a third thickness less than each of the first thickness and the second thickness and a third width. A second layer containing silicon oxide is then formed on a surface of the organic layer in a process chamber of a reactive ion etching device. The third region is then etched in the process chamber using the second layer as a mask.