公开(公告)号：US20210057425A1

公开(公告)日：2021-02-25

申请号：US16997398

申请日：2020-08-19

Applicant: Kioxia Corporation

Inventor： Yefei HAN ,  Tetsu MOROOKA ,  Norio OHTANI

IPC: H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28

Abstract: According to one embodiment, a semiconductor storage device includes a first interconnection, a second interconnection, a first channel part, a second channel part, a first charge storage part, a second charge storage part, a first insulator, a second insulator, and a third insulator. The first insulator includes a portion between at least a portion of the first charge storage part and at least a portion of the second charge storage part, and extends in a first direction. The second insulator is between the first insulator and the first interconnection, and extends in the first direction at a position arranged with respect to the first charge storage part in the first direction. The third insulator is between the second interconnection and the first insulator, and extends in the first direction at a position arranged with respect to the second charge storage part in the first direction.