公开(公告)号：US20230276630A1

公开(公告)日：2023-08-31

申请号：US17900042

申请日：2022-08-31

Applicant: Kioxia Corporation

Inventor： Tetsu MOROOKA

IPC: H01L27/11573 ,  H01L27/1157 ,  H01L27/11531

CPC classification number: H01L27/11573 ,  H01L27/1157 ,  H01L27/11531

Abstract: A semiconductor device includes: a plurality of first interconnections extending in a first direction and spaced from one another in a second direction crossing the first direction; a channel adjacent to the first interconnections in a third direction crossing the first direction and the second direction and extending in the second direction; and a plurality of first charge storage sections, each of the first charge storage sections provided between a corresponding one of the first interconnections and the channel. The first interconnections each include a first portion relatively farther from the channel and a second portion relatively closer to the channel, wherein the first portion includes a first thickness in the second direction and the second portion includes a second thickness in the second direction, and wherein the second thickness is substantially greater than the first thickness.

公开(公告)号：US20210288157A1

公开(公告)日：2021-09-16

申请号：US17019456

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tetsu MOROOKA

IPC: H01L29/423 ,  G11C8/14 ,  H01L21/28 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of first interconnection layers, a semiconductor layer, a first charge storage part, a conductor, and a connection portion. The plurality of first interconnection layers extend in a first direction and are arrayed in a second direction intersecting the first direction. The semiconductor layer extends in the second direction and faces the plurality of first interconnection layers in a third direction intersecting the first direction and the second direction. The first charge storage part is provided between a first interconnection layer and the semiconductor layer. The conductor extends in the second direction on an opposite side of the first charge storage part with respect to the semiconductor layer. The connection portion has a first end that is in contact with the semiconductor layer and a second end that is in contact with the conductor.

公开(公告)号：US20210057425A1

公开(公告)日：2021-02-25

申请号：US16997398

申请日：2020-08-19

Applicant: Kioxia Corporation

Inventor： Yefei HAN ,  Tetsu MOROOKA ,  Norio OHTANI

IPC: H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28

Abstract: According to one embodiment, a semiconductor storage device includes a first interconnection, a second interconnection, a first channel part, a second channel part, a first charge storage part, a second charge storage part, a first insulator, a second insulator, and a third insulator. The first insulator includes a portion between at least a portion of the first charge storage part and at least a portion of the second charge storage part, and extends in a first direction. The second insulator is between the first insulator and the first interconnection, and extends in the first direction at a position arranged with respect to the first charge storage part in the first direction. The third insulator is between the second interconnection and the first insulator, and extends in the first direction at a position arranged with respect to the second charge storage part in the first direction.

公开(公告)号：US20230200060A1

公开(公告)日：2023-06-22

申请号：US17896934

申请日：2022-08-26

Applicant: Kioxia Corporation

Inventor： Tetsu MOROOKA

IPC: H01L27/11556

CPC classification number: H01L27/11556

Abstract: A semiconductor device includes first conductive layers stacked in a first direction; a semiconductor film extending in the first direction; a first electrode film disposed between a corresponding one of the first conductive layers and the semiconductor film, and extending in a second direction; and a first insulating film disposed between the first conductive layer and the first electrode film. The first insulating film includes a first portion extending along a first sidewall of the first electrode film; a second portion that extends from an upper end of the first portion in a third direction to extend along an upper surface of the first electrode film; and a third portion that extends from a lower end of the first portion in the third direction to extend along a lower surface of the first electrode film.