公开(公告)号：US20230027173A1

公开(公告)日：2023-01-26

申请号：US17958849

申请日：2022-10-03

Applicant: Kioxia Corporation

Inventor： Kaito SHIRAI ,  Hideto TAKEKIDA ,  Tatsuo IZUMI ,  Reiko SHAMOTO ,  Takahisa KANEMURA ,  Shigeo KONDO

IPC: H01L27/11582 ,  H01L29/51 ,  H01L27/11565 ,  H01L21/28 ,  H01L27/1157

Abstract: A semiconductor device is provided, including: a substrate; a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator; a second stacked portion provided above the first stacked portion and including a plurality of second electrode layers stacked in the first direction via a second insulator; a connection portion provided between the first stacked portion and the second stacked portion, and including a third insulator; a column-shaped portion extending in the first stacked portion, the second stacked portion, and the connection portion in the first direction, and including a semiconductor body and a charge storage portion; and a semiconductor pillar provided between the substrate and the column-shaped portion, and in contact with the substrate and the semiconductor body of the column-shaped portion.