MAGNETIC MEMORY AND MEMORY SYSTEM

    公开(公告)号:US20250022498A1

    公开(公告)日:2025-01-16

    申请号:US18764581

    申请日:2024-07-05

    Abstract: A first circuit outputs first information indicating presence/absence of a magnetic wall between two adjacent portions among portions of a magnetic body, and second information based on the combination of magnetization states of the two portions. A first storage circuit stores first bits corresponding to the portions. A most significant bit of the first bits has a value independent of a magnetization state of a corresponding one of the portions, and the first bits have a value based on the first information. A second storage circuit stores the second information. The second circuit causes the first storage circuit to output the first bits when a value of a least significant bit of the first bits matches a value of the second information, and otherwise third bits having inverse values of the first bits.

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