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公开(公告)号:US20250105023A1
公开(公告)日:2025-03-27
申请号:US18817372
申请日:2024-08-28
Applicant: Kioxia Corporation
Inventor: Shunichi YONEDA , Kazuhiro MATSUO , Masaya TODA , Kota TAKAHASHI , Masaya NAKATA , Kenichiro TORATANI , Ha HOANG , Takuma DOI , Wakako MORIYAMA
Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.