公开(公告)号：US20250098248A1

公开(公告)日：2025-03-20

申请号：US18828277

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Masaya NAKATA ,  Kota TAKAHASHI ,  Yusuke MIKI ,  Takuma DOI ,  Kazuhiro MATSUO ,  Akifumi GAWASE ,  Kenichiro TORATANI

IPC: H01L29/26 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66

Abstract: A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

公开(公告)号：US20250105023A1

公开(公告)日：2025-03-27

申请号：US18817372

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Shunichi YONEDA ,  Kazuhiro MATSUO ,  Masaya TODA ,  Kota TAKAHASHI ,  Masaya NAKATA ,  Kenichiro TORATANI ,  Ha HOANG ,  Takuma DOI ,  Wakako MORIYAMA

IPC: H01L21/46 ,  C23C8/12

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).